US4252580A
Expired / Lapsed
US
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Method of producing a microwave InP/SiO2 insulated gate field effect transistor
Assignee: Individual
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Filing: 1979-05-21
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Granted: 1981-02-24
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Expires: 1999-05-21
Abstract
Abstract An InP/SiO 2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator.
Inventors
- 👤 Louis J. Messick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 09:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/80; H10D62/85; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; Y; Y10; Y10S; Y10S148/00; Y10S148/119
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
72 words
In a method for producing an insulated gate field effect transistor, the steps of: selecting a semi-insulating indium phosphide substrate; depositing a film of n-type semiconducting indium phosphide on said substrate; disposing a source contact and a drain contact spread apart on said semiconducting film; depositing a layer of silicon dioxide over said semiconducting film between said source and drain contacts; and disposing a gate electrode on said layer of silicon dioxide.
Claim 2
Dependent Claim
72 words
In a method for producing an insulated gate field effect transistor, the steps of: selecting a semi-insulating indium phosphide substrate; depositing a film of n-type semiconducting indium phosphide on said substrate; disposing a source contact and a drain contact spread apart on said semiconducting film; depositing a layer of silicon dioxide over said semiconducting film between said source and drain contacts; and disposing a gate electrode on said layer of silicon dioxide.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said InP material is an epitaxial film.
Claim 4
Dependent Claim
15 words
The method of claim 2 wherein said InP material is a mesa of epitaxial film.
Claim 5
Dependent Claim
43 words
The method of claim 3 wherein said mesa is separated into two distinct regions with said gate electrode intermediate said regions, one of said regions having said source contact disposed thereon and the other of said regions having said drain contact disposed thereon.
Claim 6
Independent Claim
120 words
The method of making an insulated gate field effect transistor including the steps of: placing an indium phosphide sample consisting of an indium phosphide n-type semiconducting film deposed on a semi-insulating indium phosphide substrate, in a reaction zone; introducing a vaporous mixture of nitrogen, oxygen and silane (SiH 4 ) into said reaction zone; heating said indium phosphide sample to a temperature sufficient to cause the formation of a vitreous SiO 2 film on said semiconducting film without producing interfacial properties unsuitable for the fabrication of field effect transistors; maintaining said temperature for a period of time sufficient to deposit an SiO 2 film having a thickness suitable as a gate insulating film on the surface of said semiconducting film.
Claim 7
Independent Claim
120 words
The method of making an insulated gate field effect transistor including the steps of: placing an indium phosphide sample consisting of an indium phosphide n-type semiconducting film deposed on a semi-insulating indium phosphide substrate, in a reaction zone; introducing a vaporous mixture of nitrogen, oxygen and silane (SiH 4 ) into said reaction zone; heating said indium phosphide sample to a temperature sufficient to cause the formation of a vitreous SiO 2 film on said semiconducting film without producing interfacial properties unsuitable for the fabrication of field effect transistors; maintaining said temperature for a period of time sufficient to deposit an SiO 2 film having a thickness suitable as a gate insulating film on the surface of said semiconducting film.
Claim 8
Dependent Claim
44 words
The method of claim 5 wherein said semiconducting film has a resistivity greater than 10 4 ohm cm and said substrate is n-type InP with a carrier concentration in the range between 10 16 /cm 3 and several times 10 17 /cm 3 .
Claim 9
Dependent Claim
24 words
The method of claim 5 wherein said vaporous mixture consists of substantially 99.46% N 2 , 0.50% O 2 and 0.04% SiH 4 .
Claim 10
Dependent Claim
72 words
In a method for producing an insulated gate field effect transistor, the steps of: selecting a semi-insulating indium phosphide substrate; depositing a film of n-type semiconducting indium phosphide on said substrate; disposing a source contact and a drain contact spread apart on said semiconducting film; depositing a layer of insulating material over said semiconducting film between said source and drain contacts; and disposing a gate electrode on said layer of insulating material.
Claim 11
Dependent Claim
72 words
In a method for producing an insulated gate field effect transistor, the steps of: selecting a semi-insulating indium phosphide substrate; depositing a film of n-type semiconducting indium phosphide on said substrate; disposing a source contact and a drain contact spread apart on said semiconducting film; depositing a layer of insulating material over said semiconducting film between said source and drain contacts; and disposing a gate electrode on said layer of insulating material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-24 | 1984-08-25 | 1985-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-24 | 1988-08-25 | 1989-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-24 | 1992-08-25 | 1993-02-24 | $7700.00 | Window Closed / Lapsed |