Method for fabricating semiconductor device and etchant for polymer resin

Claim 1

A method for fabricating a semiconductor device comprising the steps of: forming, on a body, a layer of cured polymer resin selected from the group consisting of polyimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C.; and contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and at least one polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C., to a prescribed portion of said cured layer so as to form an opening at said prescribed portion.

Claim 2

A method for fabricating a semiconductor device comprising the steps of: forming, on a body, a layer of cured polymer resin selected from the group consisting of polyimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C.; and contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and at least one polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C., to a prescribed portion of said cured layer so as to form an opening at said prescribed portion.

Claim 21

A method for fabricating a semiconductor device comprising the steps of: forming at least one circuit element in a semiconductor body; forming an insulating layer on the surface of said body; forming at least one opening at prescribed portions of said insulating layer for exposing at least one prescribed surface of said circuit element forming a metal layer on the surface of said at least one surface and on said exposed at least one surface of said circuit element; selectively etching said metal layer for forming a prescribed pattern of said metal layer, whereby prescribed surfaces of said insulating layer are exposed; forming a layer of cured polymer resin selected from the group consisting of polymimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C., on the surfaces of said metal layer and exposed surfaces of said insulating layer; forming a photoresist layer on the surface of said cured polymer resin layer; forming a prescribed pattern on said photoresist layer, so that prescribed surfaces of said cured polymer layer are exposed; contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C., to the exposed surface of said polymer layer, so as to etch said polymer layer and to expose prescribed surfaces of said metal layer; removing said photoresist layer; forming another metal layer on the surface of said cured polymer resin layer and exposed surface of said metal layer; and etching said another metal layer so as to form a prescribed pattern.

Claim 22

A method for fabricating a semiconductor device comprising the steps of: forming at least one circuit element in a semiconductor body; forming an insulating layer on the surface of said body; forming at least one opening at prescribed portions of said insulating layer for exposing at least one prescribed surface of said circuit element forming a metal layer on the surface of said at least one surface and on said exposed at least one surface of said circuit element; selectively etching said metal layer for forming a prescribed pattern of said metal layer, whereby prescribed surfaces of said insulating layer are exposed; forming a layer of cured polymer resin selected from the group consisting of polymimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C., on the surfaces of said metal layer and exposed surfaces of said insulating layer; forming a photoresist layer on the surface of said cured polymer resin layer; forming a prescribed pattern on said photoresist layer, so that prescribed surfaces of said cured polymer layer are exposed; contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C., to the exposed surface of said polymer layer, so as to etch said polymer layer and to expose prescribed surfaces of said metal layer; removing said photoresist layer; forming another metal layer on the surface of said cured polymer resin layer and exposed surface of said metal layer; and etching said another metal layer so as to form a prescribed pattern.

Claim 26

A method for fabricating a semiconductor device comprising the steps of: forming an insulating layer on a surface of a body; forming a layer of cured polymer resin selected from the group consisting of polyimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C., on the surface of said insulating layer; forming a photoresist layer on the surface of said cured polymer layer; forming a prescribed pattern on said photoresist layer, so that prescribed surfaces of said cured polymer layer are exposed; contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C., to the exposed surface of said polymer layer, so as to etch said polymer layer and to expose prescribed surfaces of said insulating layer; removing said photoresist layer; etching said insulating layer; forming a metal layer on said cured polymer resin layer; and etching said metal layer so as to form a prescribed pattern.

Claim 27

A method for fabricating a semiconductor device comprising the steps of: forming an insulating layer on a surface of a body; forming a layer of cured polymer resin selected from the group consisting of polyimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C., on the surface of said insulating layer; forming a photoresist layer on the surface of said cured polymer layer; forming a prescribed pattern on said photoresist layer, so that prescribed surfaces of said cured polymer layer are exposed; contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C., to the exposed surface of said polymer layer, so as to etch said polymer layer and to expose prescribed surfaces of said insulating layer; removing said photoresist layer; etching said insulating layer; forming a metal layer on said cured polymer resin layer; and etching said metal layer so as to form a prescribed pattern.

Claim 31

A method for fabricating a semiconductor device comprising the steps of: forming a first metal layer on an insulating layer; etching said metal layer so as to form a prescribed pattern; forming a layer of cured polymer resin selected from the group consisting of polyimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C., on the surface of said prescribed pattern and on exposed surfaces of said insulating layer; contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C. at prescribed portions of said cured polymer layer, so as to etch said prescribed portions of said cured polymer layer and to expose surfaces of the first metal layer; forming a second metal layer on said cured polymer resin layer and exposed surfaces of said first metal layer; and etching said second metal layer so as to form a prescribed pattern.

Claim 32

A method for fabricating a semiconductor device comprising the steps of: forming a first metal layer on an insulating layer; etching said metal layer so as to form a prescribed pattern; forming a layer of cured polymer resin selected from the group consisting of polyimide and polyimide-iso-indroquinazolinedione and cured at 260°-450° C., on the surface of said prescribed pattern and on exposed surfaces of said insulating layer; contacting an etchant consisting essentially of hydrazine or hydrazine hydrate and polyamine shown by a chemical formula of NH.sub.2.R.NH.sub.2 wherein R is selected from divalent radicals having 2-6 carbon atoms, the temperature of said etchant being in a range from 25° C. to 35° C. at prescribed portions of said cured polymer layer, so as to etch said prescribed portions of said cured polymer layer and to expose surfaces of the first metal layer; forming a second metal layer on said cured polymer resin layer and exposed surfaces of said first metal layer; and etching said second metal layer so as to form a prescribed pattern.