Apparatus for multilayer thin film deposition

Claim 2

Sputtering apparatus for thin film deposition of at least a first and a second material onto an elongate substrate having a predetermined transverse dimension, comprising: an evacuable chamber including pump means connected thereto for lowering the interior pressure of the chamber; at least a first and a second means for deposition of the first and second material, respectively, onto the substrate, each one of the deposition means being mounted interior of the chamber and including an enclosure having terminal portions forming an edge that defines an elongate opening; means mounted interior of the chamber for transporting the substrate to and from the first and the second deposition means, the transport means including means for supporting a portion of the substrate proximate each one of the deposition means, positioning the substrate in confronting relation with the opening of each one of the enclosures to form a generally uniform interstitial gap between each said edge of each said enclosure and said supporting means; and means for introducing and maintaining a first and a second gas into the respective enclosure of the first and the second deposition means at pressures greater than the interior pressure of the chamber, said interstitial gap being configured and dimensioned to restrict outflow of said first and second gas from the respective enclosure of said first and second deposition means.

Claim 3

The apparatus of claim 1, wherein the support means is in the form of a rotatably mounted cylinder, the elongate openings of the first deposition means and the second deposition means being relatively oriented generally parallel to the axis of the cylinder and proximate the outer surface thereof.

Claim 4

The apparatus of claim 2, including means for cooling the support means.

Claim 5

The apparatus of claim 3, including means for establishing thermal conductivity between the support means and the portion of the substrate supported thereby.

Claim 6

Apparatus for multilayered sputter deposition of at least a first and a second thin film of material upon an elongate, flexible substrate, comprising: a chamber including an interior adapted to maintain a low pressure-controlled atmosphere; means mounted within the interior of said chamber for supporting the substrate; at least a first and a second deposition means mounted interior of the chamber relatively spaced from one another a predetermined distance, each of the deposition means including an enclosure having edge portions configured to define an opening positioned in spaced, confronting relation to the support means and forming an interstitial gap therebetween, and a metallic cathode situated interiorly of the enclosure; means for communicating a first and a second gas to the respective enclosures of the first and the second deposition means and for maintaining the respective gases at pressures greater than the pressure interior of the chamber, said interstitial gap formed between said edge portions of each of said enclosures and said supporting means being dimensioned to restrict outflow of said respective gases from said respective enclosures; means for establishing an electric field between the cathode and the support means to produce a gas discharge plasma, the support means being relatively positioned to place the gas discharge plasma intermediate the cathode and the support means; and means for transporting the substrate to and from the first and second deposition means, placing the substrate intermediate the support means and the cathode whereby as a substrate is transported past the first and second deposition means the thin films of the first and the second materials, respectively, are deposited thereon.

Claim 7

Apparatus for multilayered sputter deposition of at least a first and a second thin film of material upon an elongate, flexible substrate, comprising: a chamber including an interior adapted to maintain a low pressure-controlled atmosphere; means mounted within the interior of said chamber for supporting the substrate; at least a first and a second deposition means mounted interior of the chamber relatively spaced from one another a predetermined distance, each of the deposition means including an enclosure having edge portions configured to define an opening positioned in spaced, confronting relation to the support means and forming an interstitial gap therebetween, and a metallic cathode situated interiorly of the enclosure; means for communicating a first and a second gas to the respective enclosures of the first and the second deposition means and for maintaining the respective gases at pressures greater than the pressure interior of the chamber, said interstitial gap formed between said edge portions of each of said enclosures and said supporting means being dimensioned to restrict outflow of said respective gases from said respective enclosures; means for establishing an electric field between the cathode and the support means to produce a gas discharge plasma, the support means being relatively positioned to place the gas discharge plasma intermediate the cathode and the support means; and means for transporting the substrate to and from the first and second deposition means, placing the substrate intermediate the support means and the cathode whereby as a substrate is transported past the first and second deposition means the thin films of the first and the second materials, respectively, are deposited thereon.

Claim 8

The apparatus of claim 5, wherein the gas introduced into the enclosure of the first deposition means is reactive.

Claim 9

The apparatus of claim 6, wherein the gas introduced into the second deposition means is inert.

Claim 10

The apparatus of claim 5, wherein the support member is a free-wheeling cylinder having an outer circumferential surface of axial dimension at least as great as the transverse dimension of the substrate.

Claim 11

The apparatus of claim 8, including means for cooling the support member.

Claim 12

The apparatus of claim 5, wherein each said interstitial gap has a transverse dimension in the range of 1-2 millimeters.