Abstract An improved mask fabrication process is disclosed which may be broadly applied to ion-implantation, reactive plasma etching, or the etching of semiconductor structures. The process is based upon the deposition onto an oxide coated or bare semiconductor surface, of a first photoresist layer having formed therein a plurality of windows and which is hardened by a wet chemical technique so as to have an increased resistance to dissolution in solvents. A second photoresist layer is deposited over the surface and windows of the first layer and a subplurality of windows are formed therein over selected windows in the first photoresist layer so as to selectively block a portion of the plurality of windows in the first layer. This composite mask invention may then be employed to carry out an ion-implantation step, wet etching step or reactive plasma etching step on the oxide or semiconductor surface exposed through composite windows. The second layer of photoresist may then be removed and a substitute photoresist layer may be deposited on the surface and windows of the first, hardened photoresist layer and a different subplurality of windows in the substitute layer may be selectively formed over selected windows in the hardened photoresist layer, thereby selectively blocking a different combination of windows in the first, hardened layer.
A process for forming an improved mask on a semiconductor substrate, comprising the steps of: depositing a first resist layer on the surface of said substrate; forming a plurality of windows in said first resist layer; hardening said first resist layer by immersing it in a solution of sodium, 2 diazo, 1 oxynaphthalene, 4 sulfonate; depositing a second resist layer over the surface and windows in said first resist layer; selectively forming a subplurality of windows in said second resist layer over selected ones of said plurality of windows in said first resist layer; whereby said second resist layer selectively blocks a portion of said plurality of windows in said first layer.
Claim 2
Dependent Claim
112 words
A process for forming an improved mask on a semiconductor substrate, comprising the steps of: depositing a first resist layer on the surface of said substrate; forming a plurality of windows in said first resist layer; hardening said first resist layer by immersing it in a solution of sodium, 2 diazo, 1 oxynaphthalene, 4 sulfonate; depositing a second resist layer over the surface and windows in said first resist layer; selectively forming a subplurality of windows in said second resist layer over selected ones of said plurality of windows in said first resist layer; whereby said second resist layer selectively blocks a portion of said plurality of windows in said first layer.