MOSFET latching driver

Claim 1

A MOSFET latching driver circuit having a predetermined down-voltage level and a symmetrical rise-time and fall-time in its output signal waveform and a predetermined level of noise immunity, comprising: a first depletion mode FET device serving as a load and having a drain connected to a supply voltage and a gate and a source connected to a first node; a first enhancement mode FET device having a drain connected to said first node, a source connected to a ground potential, and a gate connected to a second node; a second depletion mode device serving as a load and having a drain connected to said supply voltage and a gate and a source connected to said second node; a second enhancement mode FET device having a drain connected to said second node, a source connected to said ground potential, and a gate connected to said first node; said first and second enhancement mode and said first and second depletion mode devices comprising a bistable latching circuit; said first depletion mode FET device and said first enhancement mode FET device having substantially the same predetermined ratio of gate width-to-length ratios as that for said second depletion mode device and said second enhancement mode device, imparting to said bistable circuit a predetermined noise immunity; a third depletion mode FET device having a drain connected to said supply voltage, a source connected to an output node, and a gate connected to said first node; a third enhancement mode FET device having a drain connected to said output node, a source connected to said ground potential, and a gate connected to said second node; said third enhancement and third depletion mode devices comprising a push-pull driver circuit; said gates of said third depletion mode and third enhancement mode FET devices having a predetermined ratio of width-to-length ratios to enable the generation of an output signal waveform having a predetermined down-voltage level by said push-pull driver circuit; said gate of said first depletion mode FET device having a predetermined different area dimension from that of said second depletion mode FET device and said gate of said first enhancement mode FET device having a predetermined different area dimension from that of said second enhancement mode FET device to provide a predetermined different magnitude of charging current to said gate of said third depletion mode FET device, with respect to the magnitude of charging current to said gate of said third enhancement mode FET device, to compensate for a difference in the gate capacitance of said third enhancement mode and third depletion mode FET devices, thereby enabling the generation of an output signal waveform having a symmetrical rise-time and fall-time.