US3943013A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Triac with gold diffused boundary
Assignee: General Electric Co
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Filing: 1973-10-11
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Granted: 1976-03-09
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Expires: 1993-10-11
Abstract
Abstract Disclosed is a bidirectional triode thyristor pellet that comprises two current conductive regions and a gate region. Gold is diffused into the boundaries between the several regions to inhibit carrier migration thereacross and thus reduce turnoff time. Also disclosed is a method of fabricating the subject thyristor pellet that permits glass passivation thereof if desired.
Inventors
- 👤 Richard W. Kennedy
- 👤 Edward G. Tefft
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:31
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10D; H10D99/00; H10P; H10P54/00; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/028; Y10S148/051; Y10S438/00; Y10S438/904
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
151 words
A method for fabricating a plurality of bilateral thyristor pellets on a single wafer comprising the steps of: providing a wafer of semiconductor material defining two major surfaces and selectively diffused with impurities so as to form a plurality of portions, each portion comprising a first conductive region and a second conductive region; applying a mask to one of said major surfaces, wherein said mask defines openings at the boundaries between said first conductive regions and said second conductive regions; diffusing an auxiliary impurity through said openings, wherein said auxiliary impurity stimulates carrier recombination at said boundaries; masking said openings at a temperature low enough that no significant migration of said auxiliary impurity takes place; forming new openings in said mask where intersecting grooves that will separate said portions are to be formed; forming grooves in said new openings; coating said grooves with glass; and subdividing said wafer between said portions.
Claim 2
Independent Claim
151 words
A method for fabricating a plurality of bilateral thyristor pellets on a single wafer comprising the steps of: providing a wafer of semiconductor material defining two major surfaces and selectively diffused with impurities so as to form a plurality of portions, each portion comprising a first conductive region and a second conductive region; applying a mask to one of said major surfaces, wherein said mask defines openings at the boundaries between said first conductive regions and said second conductive regions; diffusing an auxiliary impurity through said openings, wherein said auxiliary impurity stimulates carrier recombination at said boundaries; masking said openings at a temperature low enough that no significant migration of said auxiliary impurity takes place; forming new openings in said mask where intersecting grooves that will separate said portions are to be formed; forming grooves in said new openings; coating said grooves with glass; and subdividing said wafer between said portions.
Claim 3
Dependent Claim
42 words
A method according to claim 1 wherein said step of applying a mask comprises the steps of thermally growing a layer of oxide on said one major surface and selectively removing the portions of said layer of oxide that overlie said boundaries.
Claim 4
Dependent Claim
24 words
A method according to claim 2 wherein said step of diffusing an auxiliary impurity comprises vapor depositing said auxiliary impurity on said semiconductor material.
Claim 5
Dependent Claim
32 words
A method according to claim 1 wherein said step of coating said grooves comprises depositing said said glass in said grooves in a particulate form and applying heat to fuse said glass.
Claim 6
Dependent Claim
59 words
A method according to claim 4 wherein said step of thermally growing a layer of oxide is carried out at a temperature of above approximately 1100° Centigrade and said step of diffusing an auxiliary impurity is carried out at approximately 800°-900° Centigrade and said step of applying heat to fuse said glass is carried out at approximately 700° Centigrade.
Claim 7
Dependent Claim
12 words
A method according to claim 1 wherein said auxiliary impurity is gold.
Claim 8
Dependent Claim
52 words
A method according to claim 1 wherein each of said portions comprises a gate region at least partially bounded by said first conductive region and said second conductive region and wherein said mask defines openings at the boundaries between said gate region and said first conductive region and said second conductive region.
Claim 9
Dependent Claim
31 words
A method according to claim 1 wherein said step of masking said openings comprises covering said openings with a low temperature coating selected from the group consisting of lacquer and wax.
Claim 10
Dependent Claim
25 words
A method according to claim 8 wherein said step of forming new opening comprises the substeps of selectively applying photoresist and etching said new openings.
Claim 11
Dependent Claim
42 words
A method according to claim 9 wherein said step of applying a mask comprises the steps of thermally growing a layer of oxide on said one major surface and selectively removing the portions of said layer of oxide that overlie said boundaries.
Claim 12
Dependent Claim
31 words
A method according to claim 10 wherein said step of coating said grooves comprises depositing said glass in said grooves in a particulate form and applying heat to fuse said glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-09 | 1979-09-08 | 1980-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-09 | 1983-09-08 | 1984-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-09 | 1987-09-08 | 1988-03-09 | $7700.00 | Window Closed / Lapsed |