US3912826A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of physical vapor deposition
Assignee: Airco Inc
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Filing: 1974-01-14
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Granted: 1975-10-14
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Expires: 1994-01-14
Abstract
Abstract A method of physical vapor deposition is described wherein a source of evaporant material and a substrate are placed in a vacuum chamber maintained at a pressure of less than 10 4 Torr. A vapor of the evaporant material is produced for deposition on the substrate. The vapor is intercepted with the beam of electrons to produce positive ions, and the substrate is maintained at a negative electrical potential sufficient to cause substantial heating of the substrate by ion bombardment.
Inventors
- 👤 Kurt D Kennedy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/541; C23C14/24; C23C14/32; Y; Y10; Y10S; Y10S148/00; Y10S148/045; Y10S148/071; Y10S148/169
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
123 words
A METHOD OF HYSICAL VAPOR DEPOSITION FOR DEPOSITING MATERIAL ON A SUBSTRATE,COMPRISING, REPLACING A SOURCE OF EAPORANT MATERIAL AND A SUBSTRATE IN A VACUUM CHAMBER, MAINTINING AN AMBIENT PRESSURE IN THE VACUUM CHAMBER OF LESS THAN 10-4 TORR, HEATING THE EVPORANT MATERIAL BY MEANSOF AN ELECTRON BEAM TO PRODUCE A VAPOR FOR DEPOSITION ON THE BSTRATE AND INTERCEPTING THE VAPOR WITH THE BEAM OF ELECTRONS TO PRODUCE POSITIVE IONS, AND APPLYING AN ELECTRICAL POTENTIAL TO THE SUBSTRATE SUFFICIENT TO CAUSE ION BOMBARDMENT OF THE SUBSTRATE AT A POWER DENSITY OF AT LEAST ABOUT 6 WATTS PER SQUARE INCH OF EXPOSED SUBSTRATE SURFACE AND MAINTAIN THE SUBSTRAE AT AN EQUILIBRIUM TEMPERATURE WHICH IS AT LEAST 25% OF THE ABSOLUTE MELTING TEMPERATURE OF THE EVAPORANT.
Claim 2
Independent Claim
123 words
A METHOD OF HYSICAL VAPOR DEPOSITION FOR DEPOSITING MATERIAL ON A SUBSTRATE,COMPRISING, REPLACING A SOURCE OF EAPORANT MATERIAL AND A SUBSTRATE IN A VACUUM CHAMBER, MAINTINING AN AMBIENT PRESSURE IN THE VACUUM CHAMBER OF LESS THAN 10-4 TORR, HEATING THE EVPORANT MATERIAL BY MEANSOF AN ELECTRON BEAM TO PRODUCE A VAPOR FOR DEPOSITION ON THE BSTRATE AND INTERCEPTING THE VAPOR WITH THE BEAM OF ELECTRONS TO PRODUCE POSITIVE IONS, AND APPLYING AN ELECTRICAL POTENTIAL TO THE SUBSTRATE SUFFICIENT TO CAUSE ION BOMBARDMENT OF THE SUBSTRATE AT A POWER DENSITY OF AT LEAST ABOUT 6 WATTS PER SQUARE INCH OF EXPOSED SUBSTRATE SURFACE AND MAINTAIN THE SUBSTRAE AT AN EQUILIBRIUM TEMPERATURE WHICH IS AT LEAST 25% OF THE ABSOLUTE MELTING TEMPERATURE OF THE EVAPORANT.
Claim 3
Dependent Claim
22 words
A method according to claim 1 wherein the electrical potential maintained on the substrate is negative d-c with respect to the source.
Claim 4
Dependent Claim
21 words
A method according to claim 1 wherein the electrical potential maintained on the substrate is a-c with respect to the source.
Claim 5
Dependent Claim
30 words
A method according to claim 1 including the additional steps of sensing the temperature of the substrate and regulating the electrical potential maintained thereon in accordance with the sensed temperature.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-13 | 1979-04-14 | 1979-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-13 | 1983-04-14 | 1983-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-13 | 1987-04-14 | 1987-10-14 | $7700.00 | Window Closed / Lapsed |