US3901736A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making deep diode devices
Assignee: General Electric Co
•
Filing: 1973-10-30
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Granted: 1975-08-26
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Expires: 1993-10-30
Abstract
Abstract Parallel spaced P-N junctions extending as columns or planes through a silicon wafer are made by covering the wafer surface so that portions are exposed in desired pattern, then removing portions of the surface of the wafer so exposed to produce recesses in the wafer, thereafter filling the recesses with aluminum and removing the covering, then heating and forming a liquid body in each recess. By maintaining a finite thermal gradient in a first direction through the wafer and maintaining a zero thermal gradient through the wafer in a direction normal to that first direction, the several liquid bodies are caused to migrate through the silicon wafer along separate straight lines to reproduce the recess pattern as recrystallized regions within the wafer.
Inventors
- 👤 Thomas R Anthony
- 👤 Harvey E Cline
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:55
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/115
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
217 words
THE METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING A MATRIX BODY OF SEMICONDUCTOR MATERIAL OF SELECTED CONDUCTIVITY AND SELECTED RESISTIVITY AND A PLURALITY OF SEPARATE AND SPACED RECRYSTALLIZED REGIONS OF DIFFERENT SELECTED CONDCTIVITY AND SELECTED RESISTIVITY EXTENDING INTO THE INTERIOR OF THE MATRIX BODY IN ORDERED ARRAY, WHICH COMPRISES THE STEPS OF PROVIDING A COVERING OVER A FIRT SUBSTANTIALLY PLANAR SURFACE OF THE MATRIX BODY SO THAT PORTIONS OF THE SURFACE OF SAID ARE EXPOSED IN A PREDETERMINED PATTERN, REMOVING PORTIONS OF THE SAID BODY TO EXPOSED TO PROVIDE A PLURALITY OF SEPARATE AND AND SPACED RECESSES OF DEPTH LESS THAN ABOUT 30 MICRONS IN THE SAID FIRST SURFACE IN THE DESIRED ORDERED ARRAY, SUBSTANTIALLY FILLING EACH OF THE RESULTING RECESSES WITH A SOLID METELLIC MATERIAL WITH WHICH THE MATRIX SEMICONDUCTOR MATERIAL WILL FORM A SOLUTION OF MELTING POINT TEMPERATURE BELOW THAT OF THE MATRIX SEMICONDUCTOR MATERIAL, HEATING THE MATRIX BODY AND THEREBY FORMING IN EACH OF THE RECESSES A LIQUID BODY OF A SOLUTION OF THE MATRIX SEMICONDUCTOR MATREIAL AND THE METALLIC MATERIAL, ESTABLISHING AND MAINTAINING A FINITE TEMPERATURE GRADIENT IN A FIRST DIRECTION THROUGH THE MATRIX WITH THE SAID FIRST SUBSTANTIALLY PLANAR SURFACE BEING AT A TEMPERATURE LOWER THAN THAT OF SECOND SURFACE, AND MIGRATING THE LIQUID BODIES INTO THE INTERIR OF THE MATRIX BODIES.
Claim 2
Independent Claim
217 words
THE METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING A MATRIX BODY OF SEMICONDUCTOR MATERIAL OF SELECTED CONDUCTIVITY AND SELECTED RESISTIVITY AND A PLURALITY OF SEPARATE AND SPACED RECRYSTALLIZED REGIONS OF DIFFERENT SELECTED CONDCTIVITY AND SELECTED RESISTIVITY EXTENDING INTO THE INTERIOR OF THE MATRIX BODY IN ORDERED ARRAY, WHICH COMPRISES THE STEPS OF PROVIDING A COVERING OVER A FIRT SUBSTANTIALLY PLANAR SURFACE OF THE MATRIX BODY SO THAT PORTIONS OF THE SURFACE OF SAID ARE EXPOSED IN A PREDETERMINED PATTERN, REMOVING PORTIONS OF THE SAID BODY TO EXPOSED TO PROVIDE A PLURALITY OF SEPARATE AND AND SPACED RECESSES OF DEPTH LESS THAN ABOUT 30 MICRONS IN THE SAID FIRST SURFACE IN THE DESIRED ORDERED ARRAY, SUBSTANTIALLY FILLING EACH OF THE RESULTING RECESSES WITH A SOLID METELLIC MATERIAL WITH WHICH THE MATRIX SEMICONDUCTOR MATERIAL WILL FORM A SOLUTION OF MELTING POINT TEMPERATURE BELOW THAT OF THE MATRIX SEMICONDUCTOR MATERIAL, HEATING THE MATRIX BODY AND THEREBY FORMING IN EACH OF THE RECESSES A LIQUID BODY OF A SOLUTION OF THE MATRIX SEMICONDUCTOR MATREIAL AND THE METALLIC MATERIAL, ESTABLISHING AND MAINTAINING A FINITE TEMPERATURE GRADIENT IN A FIRST DIRECTION THROUGH THE MATRIX WITH THE SAID FIRST SUBSTANTIALLY PLANAR SURFACE BEING AT A TEMPERATURE LOWER THAN THAT OF SECOND SURFACE, AND MIGRATING THE LIQUID BODIES INTO THE INTERIR OF THE MATRIX BODIES.
Claim 3
Dependent Claim
37 words
The method of claim 1 in which the covering is removed from the matrix body prior to the heating step and the liquid bodies are migrated all the way through the matrix body to the second surface.
Claim 4
Dependent Claim
36 words
The method of claim 1 in which the metallic material is vapor-deposited in the matrix body recesses until the walls of the recesses restrain the deposited metallic material in each of them from assuming spherical form.
Claim 5
Dependent Claim
40 words
The method of claim 3 in which the matrix body is silicon and the metallic material is aluminum which is free from aluminum oxide and in which the aluminum is vapor-deposited under a vacuum of 1 X 10 5 torr.
Claim 6
Dependent Claim
33 words
The method of claim 1 in which the matrix body is N-type silicon and the metallic material is aluminum which is vapor-deposited under a vacuum of at least 3 X 10 5 torr.
Claim 7
Dependent Claim
14 words
The method of claim 1 in which the matrix body is of gallium arsenide.
Claim 8
Dependent Claim
55 words
The method of claim 1 in which the matrix body consists of a wafer sliced from a <111> axial orientation silicon single crystal, and in which the first surface of the matrix wafer is polished and then oxidized to provide the covering defining a square array of openings through which the polished surface is exposed.
Claim 9
Dependent Claim
25 words
The method of claim 1 in which the matrix body is a silicon carbide single crystal and in which the solid metallic material is chromium.
Claim 10
Dependent Claim
33 words
The method of claim 1 in which a zero temperature gradient in a direction normal to the first direction is established and maintained while the liquid bodies are migrated into the matrix body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-25 | 1979-02-24 | 1979-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-25 | 1983-02-24 | 1983-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-25 | 1987-02-24 | 1987-08-26 | $7700.00 | Window Closed / Lapsed |