US3867202A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition for epitaxial growth
Assignee: Sumitomo Chemical Co Ltd
•
Filing: 1974-03-13
•
Granted: 1975-02-18
•
Expires: 1994-03-13
Abstract
Abstract An epitaxial layer of a group IIIa - Va element compound having practicable electron concentration and mobility such as those of GaAs, of less than 1 X 1016/cm3 at room temperature and more than 6,000 cm2/V-sec., respectively is obtained by reacting triethylaluminum which contains at most 4 ppm of silicon with a gallium halide or an indium halide to produce triethylgallium or triethylindium and contacting thus obtained triethylgallium or triethylindium alone, a mixture of them or a mixture of them and an alkyl compound of aluminum with a group Va element, a hydride of said element or an alkyl compound of said element.
Inventors
- 👤 Eiichi Ichiki
- 👤 Kazuo Iida
- 👤 Masato Ogura
- 👤 Yasuo Seki
- 👤 Sizuo Asanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:15
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C07; C07F; C07F5/00; C07F5/06; C07F5/061; C07F5/064; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S148/119
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
120 words
IN A METHOD FOR PRODUCING AN EPITAXAL LAYER OF A GROUP IIIA - VA ELEMENT COMPOUND ON SURFACE OF A SUBSTRATE WHICH COMPRISES REACTING AN ALKYL COMPOUND OF A GROUP IIIA ELEMENT WITH A GROUP VA ELEMENT OR A VOLATILE COMPOUND THEREOF IN VAPOR PHASE AND CONTACTING THE REACTION PRODUCT WITH THE SUBSTRATE, THE IMPROVEMENT WHICH COMPRISES REACTING TRIETHYLALUMINUM WHICH CONTAINS AT MOST 4 PPM OF SILICON WITH A GALLIUM HALIDE OR AN INDIUM HALIDE TO PRODUCE TRIETHYLGALLIUM OR TRIETHYLINDIUM AND CONTACTING THUS OBTAINED TRIETHYGALLIUM OR TRIETHYLINDIUM ALONE, A MIXTURE OF THEM OR A MIXTURE OF THEM AND AN ALKYL COMPOUND OF ALUMINUM WITH A GROUP VA ELEMENT, A HYDRIDE OF SAID ELEMENT OR AN ALKYL COMPOUND OF SAID ELEMENT.
Claim 2
Dependent Claim
120 words
IN A METHOD FOR PRODUCING AN EPITAXAL LAYER OF A GROUP IIIA - VA ELEMENT COMPOUND ON SURFACE OF A SUBSTRATE WHICH COMPRISES REACTING AN ALKYL COMPOUND OF A GROUP IIIA ELEMENT WITH A GROUP VA ELEMENT OR A VOLATILE COMPOUND THEREOF IN VAPOR PHASE AND CONTACTING THE REACTION PRODUCT WITH THE SUBSTRATE, THE IMPROVEMENT WHICH COMPRISES REACTING TRIETHYLALUMINUM WHICH CONTAINS AT MOST 4 PPM OF SILICON WITH A GALLIUM HALIDE OR AN INDIUM HALIDE TO PRODUCE TRIETHYLGALLIUM OR TRIETHYLINDIUM AND CONTACTING THUS OBTAINED TRIETHYGALLIUM OR TRIETHYLINDIUM ALONE, A MIXTURE OF THEM OR A MIXTURE OF THEM AND AN ALKYL COMPOUND OF ALUMINUM WITH A GROUP VA ELEMENT, A HYDRIDE OF SAID ELEMENT OR AN ALKYL COMPOUND OF SAID ELEMENT.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein said triethylaluminum is prepared by a reaction of triethylaluminum, diethylaluminum hydride or a mixture thereof, aluminum, hydrogen and ethylene.
Claim 4
Dependent Claim
40 words
A method according to claim 1, wherein said triethylaluminum is prepared by reacting an alkylaluminum compound, aluminum and hydrogen or reacting an alkylaluminum compound, aluminum, hydrogen and an olefin and subjecting thus obtained alkylaluminum to alkyl exchange reaction with ethylene.
Claim 5
Dependent Claim
25 words
A method according to claim 1, wherein said triethylaluminum is prepared by reducing an ethylaluminum sesquihalide obtained by reaction of aluminum and an ethyl halide.
Claim 6
Dependent Claim
20 words
A method according to claim 1, wherein the gallium halide is selected from gallium chloride, gallium bromide and gallium iodide.
Claim 7
Dependent Claim
20 words
A method according to claim 1, wherein the indium halide is selected from indium chloride, indium bromide and indium iodide.
Claim 8
Dependent Claim
35 words
A method according to claim 1, wherein at least 3 mols of triethylaluminum is used per 1 mol of gallium halide or indium halide in the reaction of triethylaluminum and gallium halide or indium halide.
Claim 9
Dependent Claim
30 words
A method according to claim 1, wherein the reaction of triethylaluminum and gallium halide or indium halide is carried out at a temperature of 0* - 150*C under normal pressure.
Claim 10
Dependent Claim
17 words
A method according to claim 1, wherein the group Va element is selected from arsenic and phosphorus.
Claim 11
Dependent Claim
32 words
A method according to claim 1, wherein the hydride or alkyl compound of the group Va element is selected from phosphine, triethylphosphine, diethylphosphine, monoethylphosphine, tripropylphosphine, arsine, triethylarsine, diethylarsine, monoethylarsine, monopropylarsine and ammonia.
Claim 12
Dependent Claim
30 words
A method according to claim 1, wherein the alkyl compound of aluminum mixed with triethylgallium or triethylindium is selected from triethyl aluminum, diethylaluminum hydride, tripropylaluminum, dipropylaluminum hydride and dibutylaluminum hydride.
Claim 13
Dependent Claim
18 words
A method according to claim 1, wherein the growth of crystal is carried out at 500* - 1,300*C.
Claim 14
Dependent Claim
26 words
An epitaxial layer having an electron concentration at room temperature of less than 1 X 1016/cm3 which is obtained by the method defined in claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-17 | 1978-08-19 | 1979-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-17 | 1982-08-19 | 1983-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-17 | 1986-08-19 | 1987-02-18 | $7700.00 | Window Closed / Lapsed |