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US3866143A Expired / Lapsed US ⏱️ 0.0 years remaining

Quasi-optical integrated circuits

Assignee: United States Department of the Army
•
Filing: 1973-09-13
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Granted: 1975-02-11
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Expires: 1993-09-13
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Abstract

Abstract A quasi-optical integrated circuit which makes use of a high resistivity bulk single crystal intrinsic semiconductor as a low loss quasi-optical wave transmission medium for millimeter and submillimeter waves having one or more circuit elements or devices disposed either at or near the surface of a portion of the semiconductor, or formed within a portion of either the semiconductor transmission medium or a portion of a high resistivity single crystal intrinsic semiconductor appendage to said semiconductor transmission medium. By varying the potential applied to said elements or devices, one can control either the phase or the amplitude of quasi-optical wave propagation along the semiconductor waveguide; moreover, solid state devices such as quasi-optical generators, mixers and detectors can be formed within the semiconductor wave transmission medium itself. Quasioptical generators also can be obtained by inserting a negative resistance device in an aperture disposed within a cavity resonator which is made of a material of high dielectric constant and high resistivity.

Inventors

  • 👤 Harold Jacobs
  • 👤 Metro M Chrepta

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 03:29
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/18; H01P1/185; H01P1/22; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03C; H03C7/00; H03C7/02; H03C7/025; H03C7/027; H03D; H03D9/00; H03D9/06; H03G; H03G1/00; H03G1/0005; H03G1/0035; H03B2009/126

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 72 words
A quasi-optical oscillator compriSing an active electron device capable of operating in the millimeter and submillimeter region of the electromagnetic frequency spectrum and a cavity resonator structure having a resonant line length and consisting of a bulk intrinsic semiconductor material of high resistivity for guiding wave energy produced by said electron device, said electron device being positioned within said resonator structure, said electron device further having applied thereto a unidirectional biasing potential.
Claim 2
Dependent Claim 72 words
A quasi-optical oscillator compriSing an active electron device capable of operating in the millimeter and submillimeter region of the electromagnetic frequency spectrum and a cavity resonator structure having a resonant line length and consisting of a bulk intrinsic semiconductor material of high resistivity for guiding wave energy produced by said electron device, said electron device being positioned within said resonator structure, said electron device further having applied thereto a unidirectional biasing potential.
Claim 3
Dependent Claim 18 words
An oscillator according to claim 1 wherein said electron device is formed in situ within said resonator structure.
Claim 4
Dependent Claim 27 words
An oscillator according to claim 2 wherein said electron device is made up of contacting doped regions of opposite conductivity type disposed within said semiconductor resonator structure.
Claim 5
Dependent Claim 20 words
An oscillator according to claim 1 wherein said electron device is inserted within an aperture in said cavity resonator structure.
Claim 6
Dependent Claim 15 words
An oscillator according to claim 2 wherein said formed electron device is an Impatt diode.
Claim 7
Dependent Claim 14 words
An oscillator according to claim 2 wherein said electron device is a Gunn diode.
Claim 8
Dependent Claim 14 words
An oscillator according to claim 4 wherein said electron device is an Impatt diode.
Claim 9
Dependent Claim 14 words
An oscillator according to claim 4 wherein said electron device is a Gunn diode.
Claim 10
Dependent Claim 33 words
An oscillator according to claim 1 further including an intrinsic semiconductor quasi-optical energy waveguiding medium for high resistivity positioned in energy coupling relationship with the quasi-optical wave energy in said cavity resonator structure.
Claim 11
Dependent Claim 18 words
An oscillator according to claim 9 wherein said wave-guiding medium is disposed colinear with said cavity resonator structure.
Claim 12
Dependent Claim 17 words
An oscillator according to claim 9 wherein said wave-guiding medium is mounted on said cavity resonator structure.

References Cited (Backward Citations)

US3430061A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-02-10 1978-08-12 1979-02-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-02-10 1982-08-12 1983-02-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-02-10 1986-08-12 1987-02-11 $7700.00 Window Closed / Lapsed

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