US3764950A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods for making semiconductor pressure transducers and the resulting structures
Assignee: Fairchild Semiconductor Corp
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Filing: 1972-07-17
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Granted: 1973-10-09
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Expires: 1992-07-17
Abstract
Abstract A semiconductor pressure transducer comprises a first portion of semiconductor material containing therein a hole, a second portion of semiconductor material placed over the top of said hole and strain sensitive electrical components formed on a selected surface of said first or said second portions of semiconductor material so as to be responsive to variations in pressures incident upon said transducer. A plurality of such semiconductor transducers are formed using semiconductor processing techniques by forming a plurality of holes in a first wafer of semiconductor material, forming a plurality of strain sensitive electrical components on a selected surface of either said first wafer or a second wafer of semiconductor material, then joining the first and second wafers of semiconductor material in a controlled pressure environment so as to seal said plurality of holes and finally separating the transducers from the composite structure.
Inventors
- 👤 P Wallia
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:01
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50; G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; H10D99/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
71 words
Structure which comprises: a first semiconductor wafer with a first surface and a second surface and a plurality of holes formed in said first surface; a second semiconductor wafer containing a first surface and a second surface; means joining said first wafer to said second wafer and a plurality of strain sensitive electrical components formed on a selected surface of said two wafers in cooperating relationship to said plurality of holes.
Claim 2
Dependent Claim
71 words
Structure which comprises: a first semiconductor wafer with a first surface and a second surface and a plurality of holes formed in said first surface; a second semiconductor wafer containing a first surface and a second surface; means joining said first wafer to said second wafer and a plurality of strain sensitive electrical components formed on a selected surface of said two wafers in cooperating relationship to said plurality of holes.
Claim 3
Dependent Claim
21 words
Structure as in claim 1 wherein said strain sensitive electrical components are formed on said first surface of said second wafer.
Claim 4
Dependent Claim
23 words
Structure as in claim 1 wherein said plurality of strain sensitive electrical components are formed on said second surface of said second wafer.
Claim 5
Dependent Claim
23 words
Structure as in claim 1 wherein said plurality of strain sensitive electrical components are formed on said second surface of said first wafer.
Claim 6
Dependent Claim
17 words
Structure as in claim 1 wherein said plurality of holes extend part way through said first wafer.
Claim 7
Dependent Claim
15 words
Structure as in claim 1 wherein saidplurality of holes extend completely through said first wafer.
Claim 8
Dependent Claim
37 words
Structure as in claim 1 wherein said plurality of strain sensitive electrical components are formed on said selected surface in a position such that maximum electrical signal is generated for a given deflection of said selected surface.
Claim 9
Dependent Claim
14 words
Structure as in claim 1 wherein a vacuum exits in each of said holes.
Claim 10
Dependent Claim
15 words
Structure as in claim 1 wherein each of said holes contains a selected reference pressure.
Claim 11
Dependent Claim
65 words
A semiconductor transducer comprising a first portion of a semiconductor material containing therein a hole; a second portion of semiconductor material placed over the top of said hole, said hole containing a selected reference pressure; and strain sensitive electrical components formed on the bottom surface of said first portion of semiconductor material so as to be responsive to variations in pressures incident upon said transducer.
Claim 12
Dependent Claim
65 words
A semiconductor transducer comprising a first portion of a semiconductor material containing therein a hole; a second portion of semiconductor material placed over the top of said hole, said hole containing a selected reference pressure; and strain sensitive electrical components formed on the bottom surface of said first portion of semiconductor material so as to be responsive to variations in pressures incident upon said transducer.
Claim 13
Dependent Claim
13 words
Structure as in claim 10 wherein said selected reference pressure is a vacuum.
Claim 14
Independent Claim
82 words
The method of manufacturing a plurality of semiconductor transducers simultaneously which comprises forming a plurality of holes in a first wafer of semiconductor material; forming a plurality of strain sensitivity electrical components on a selected surface of a second wafer of semiconductor material; joining in proper alignment said first wafer of semiconductor material and said second wafer of semiconductor material such that said second wafer of semiconductor material covers the holes in said first wafer of semiconductor material in a selected manner.
Claim 15
Independent Claim
82 words
The method of manufacturing a plurality of semiconductor transducers simultaneously which comprises forming a plurality of holes in a first wafer of semiconductor material; forming a plurality of strain sensitivity electrical components on a selected surface of a second wafer of semiconductor material; joining in proper alignment said first wafer of semiconductor material and said second wafer of semiconductor material such that said second wafer of semiconductor material covers the holes in said first wafer of semiconductor material in a selected manner.
Claim 16
Dependent Claim
48 words
A semiconductor pressure transducer formed from the structure of claim 1 comprising a strain sensitive electrical component and a hole formed by subdividing the said two semiconductor wafers of claim 1 into individual units, each of which contains one of said strain sensitive electrical components and one hole.
References Cited (Backward Citations)
US3139598A
Cited
US3417361A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-08 | 1977-04-09 | 1977-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-08 | 1981-04-09 | 1981-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-08 | 1985-04-09 | 1985-10-09 | $7700.00 | Window Closed / Lapsed |