Patent US5377690A successfully refreshed from Google Patents.
US3748480A
Expired / Lapsed
US
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Monolithic coupling device including light emitter and light sensor
Assignee: Motorola Solutions Inc
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Filing: 1970-11-02
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Granted: 1973-07-24
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Expires: 1990-11-02
Abstract
Abstract A solid state monolithic optical coupling device including a light emitting PN junction, a light sensor and an insulating body. The light emitting PN junction is formed by a body of Ptype semiconductor and a body of N-type semiconductor. The insulating body is formed on the body of N-type semiconductor and the light sensor includes a body of photoconductive material formed on the insulating body. Electrical contacts are provided on the P-type and on the N-type semiconductor, respectively for biasing the light emitting PN junction, and spaced contacts are provided on the body of photoconductive material for applying a voltage thereto. When the light emitting junction is forward biased, light emitted thereat is transmitted through the insulating body and is absorbed by the photoconductive material, causing the conductivity thereof to change and thereby changing the current through the spaced electrodes thereon.
Inventors
- 👤 M Coleman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:53
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H10; H10F; H10F99/00; H10H; H10H29/00; H10H29/10; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/059; Y10S148/065; Y10S148/067; Y10S148/12; Y10S148/122
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
215 words
A monolithic coupling device comprising: a first body of semiconductoR material of a first conductivity type; a second body of semiconductor material on said first body of semiconductor material, said first and second bodies of semiconductor material forming a light emitting PN junction; first and second contact means connected, respectively, to said first and second bodies of semiconductor material for providing electrical connection thereto; insulating means formed on said first body of semiconductor material, said insulating means being at least partially transparent to light emitted by said light emitting PN junction; light sensor means on said insulating means, wherein said insulating means includes a second layer on said first body of semiconductor material, a third layer of high resistivity material on said second layer, and a fourth layer on said third layer, said second layer being graded in chemical composition so that its lattice parameter varies in value from approximately the value of the lattice parameter of said first body of semiconductor to approximately the value of the lattice parameter of said third layer, and said fourth layer graded in chemical composition so that its lattice parameter varies in value from approximately the value of the lattice parameter of said third layer to approximately the value of the lattice parameter of said light sensor means.
Claim 2
Dependent Claim
215 words
A monolithic coupling device comprising: a first body of semiconductoR material of a first conductivity type; a second body of semiconductor material on said first body of semiconductor material, said first and second bodies of semiconductor material forming a light emitting PN junction; first and second contact means connected, respectively, to said first and second bodies of semiconductor material for providing electrical connection thereto; insulating means formed on said first body of semiconductor material, said insulating means being at least partially transparent to light emitted by said light emitting PN junction; light sensor means on said insulating means, wherein said insulating means includes a second layer on said first body of semiconductor material, a third layer of high resistivity material on said second layer, and a fourth layer on said third layer, said second layer being graded in chemical composition so that its lattice parameter varies in value from approximately the value of the lattice parameter of said first body of semiconductor to approximately the value of the lattice parameter of said third layer, and said fourth layer graded in chemical composition so that its lattice parameter varies in value from approximately the value of the lattice parameter of said third layer to approximately the value of the lattice parameter of said light sensor means.
Claim 3
Dependent Claim
21 words
The monolithic coupling device as recited in claim 1 wherein said light sensor means include a photoconductive layer on said insulating.
Claim 4
Dependent Claim
19 words
The monolithic coupling device as recited in claim 1 wherein said light sensor means include a light sensing diode.
Claim 5
Dependent Claim
19 words
The monolithic coupling device as recited in claim 1 wherein said light sensor means include a light sensing transistor.
Claim 6
Dependent Claim
179 words
A monolithic solid state coupling device comprising: a first body of semiconductor material of a first conductivity type; a second body of semiconductor material on said first body of semiconductor material, said first and second bodies of semiconductor material forming a light emitting PN junction; first and second contact means connected, respectively, to said first and second bodies of semiconductor material for making electrical connection thereto; an insulating layer at least partially transparent to light emitted by said light emitting junction formed on said first body of semiconductor material; a first layer of photoconductive material on said insulating layer, said first layer of photoconductive material having thereon spaced third and fourth contact means, wherein said insulating layer is formed of material selected from the group consisting of GaAs and GaAs1 x Px, and said first layer of photoconductive material is formed of material selected from the group consisting of Si, Ge, PbS, and said first and second bodies of semiconductor material are formed of material selected from the group consisting of GaAs, GaAsx P1 x, and Ga1 x InxP.
Claim 7
Dependent Claim
179 words
A monolithic solid state coupling device comprising: a first body of semiconductor material of a first conductivity type; a second body of semiconductor material on said first body of semiconductor material, said first and second bodies of semiconductor material forming a light emitting PN junction; first and second contact means connected, respectively, to said first and second bodies of semiconductor material for making electrical connection thereto; an insulating layer at least partially transparent to light emitted by said light emitting junction formed on said first body of semiconductor material; a first layer of photoconductive material on said insulating layer, said first layer of photoconductive material having thereon spaced third and fourth contact means, wherein said insulating layer is formed of material selected from the group consisting of GaAs and GaAs1 x Px, and said first layer of photoconductive material is formed of material selected from the group consisting of Si, Ge, PbS, and said first and second bodies of semiconductor material are formed of material selected from the group consisting of GaAs, GaAsx P1 x, and Ga1 x InxP.
Claim 8
Dependent Claim
25 words
The monolithic solid state coupling device as recited in claim 5 wherein said first conductivity type is n-type and said second conductivity type is p-type.
References Cited (Backward Citations)
US3270235A
Cited
US3358146A
Cited
US3436548A
Cited
US3443102A
Cited
US3445686A
Cited
US3636358A
Cited
US3558897A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-23 | 1977-01-22 | 1977-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-23 | 1981-01-22 | 1981-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-23 | 1985-01-22 | 1985-07-24 | $7700.00 | Window Closed / Lapsed |