US3737282A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for reducing crystallographic defects in semiconductor structures
Assignee: International Business Machines Corp
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Filing: 1971-10-01
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Granted: 1973-06-05
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Expires: 1991-10-01
Abstract
Abstract A method for fabricating semiconductor structures, wafer and devices with reduced thermally induced crystallographic defects comprising (a) supporting said wafers in close proximity to one another, (b) heating said wafers to an elevated temperature, (c) maintaining a uniform circumferential heat mass surrounding said wafers, (d) immediately withdrawing said material from the heating zone, and (e) symmetrically cooling said wafers.
Inventors
- 👤 E Hearn
- 👤 G Schwuttke
- 👤 E Tekaat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:30
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; C; C30; C30B; C30B31/00; C30B31/06; C30B31/12; C30B31/14; C30B33/00; C30B33/005; H10P36/00; H10P36/03; H10P95/40; H10P95/402; Y; Y10; Y10S; Y10S414/00; Y10S414/135; Y10S414/14
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
57 words
A method for elevated temperature processing of semiconductor structures comprising: a. supporting semiconductor structures in a tubular member, b. heating said tubular member containing semiconductor structures for a period of time, c. immediately withdrawing said member containing semiconductor structures from the heating zone, and d. symmetrically cooling said semiconductor structures in said tubular member to ambient temperature.
Claim 2
Independent Claim
57 words
A method for elevated temperature processing of semiconductor structures comprising: a. supporting semiconductor structures in a tubular member, b. heating said tubular member containing semiconductor structures for a period of time, c. immediately withdrawing said member containing semiconductor structures from the heating zone, and d. symmetrically cooling said semiconductor structures in said tubular member to ambient temperature.
Claim 3
Dependent Claim
14 words
A method in accordance with claim 1 wherein said tubular member ends are open.
Claim 4
Dependent Claim
14 words
A method in accordance with claim 2 wherein said tubular member ends are closed.
Claim 5
Dependent Claim
14 words
A method in accordance with claim 1 wherein said semiconductor structures are silicon wafers.
Claim 6
Dependent Claim
14 words
A method in accordance with claim 1 wherein said tubular member is fused silica.
Claim 7
Dependent Claim
20 words
A method in accordance with claim 1 wherein said semiconductor structures are heated to a temperature between 300* and 1500*C.
Claim 8
Dependent Claim
20 words
A method in accordance with claim 1 wherein said semiconductor structures are heated at a temperature between 350* and 1500*C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-04 | 1976-12-04 | 1977-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-04 | 1980-12-04 | 1981-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-04 | 1984-12-04 | 1985-06-05 | $7700.00 | Window Closed / Lapsed |