Assemblies of semiconductor devices having mounting pillars as circuit connections

Claim 2

In a method of manufacturing a semiconductor circuit assembly having at least one discrete device comprising a semiconductor wafer with the device contacts on one major face, each device forming at least one circuit element and being mounted with the contact-bearing wafer face supported by electrical interconnections comprising mounting pillars between the device contacts and conductive members on an insulative support member, the steps of selectively etching one plane surface of the insulative support member to form protrusions on the insulating support member, said protrusions being integral with and of the same insulating material as said support member, depositing a continuous layer of conductive material of uniform thickness on the support member and protrusions and selectively removing a portion of the deposited layer to form discrete conductive members and mounting pillars on the exposed surface of the deposited conductive material on the protrusions, said mounting pillars having a form corresponding to that of said protrusions.

Claim 3

A method as claimed in claim 1 in which the conductive material is deposited at least partially by an electro-plating process.

Claim 4

In a method of manufacturing a semiconductor circuit assembly having at least one discrete device comprising a semiconductor wafer with the device contacts on one major wafer face, each device forming at least one circuit element and being mounted with the contact-bearing wafer face supported by electrical interconnections comprising mounting pillars between the device contacts and conductive members on an insulative support member, the steps of forming protrusions on the insulating support member, said protrusions being integral with and of the same insulating material as said support member, and depositing on said support member conductive material from which the conductive members are to be formed, so as to extend over said protrusions and form mounting pillars on the exposed surface of the deposited conductive material, said mounting pillars having a form corresponding to that of said protrusions, forming said conductive members on the insulating support member, and further including the step of initially under-laying portions of the conductive members adjacent to the electrical interconnections with a layer of a different material before the other portions of the conductors are bonded to the support member and subsequently removing said different material before the wafer is mounted on the conductive members.

Claim 5

In a method of manufacturing a semiconductor circuit assembly having at least one discrete device comprising a semiconductor wafer with the device contacts on one major wafer face, each device forming at least one circuit element and being mounted with the contact-bearing wafer face supported by electrical interconnections comprising mounting pillars between the device contacts and conductive members on an insulative support member, the steps of forming protrusions on the insulating support member, said protrusions being integral with and of the same insulating material as said support member, and depositing on said support member conductive material from which the conductive members are to be formed, so as to extend over said protrusions and form mounting pillars on the exposed surface of the deposited conductive material, said mounting pillars having a form corresponding to that of said protrusions, forming said conductive members on the insulating support member, and further including the step of initially under-laying portions of the conductive members adjacent to the electrical interconnections with a layer of a different material before the other portions of the conductors are bonded to the support member and subsequently removing said different material before the wafer is mounted on the conductive members.

Claim 6

A method as claimed in claim 3 in which the conductive members are provided by depositing a continuous layer of conductive material over the protrusions on the support member, and selectively etching said layer.

Claim 7

A method as claimed in claim 3 in which the deposited conductive material is of a uniform thickness on different parts of the insulating support member.

Claim 8

A method as claimed in claim 3 in which the conductive material is deposited at least partially by an electro-plating process.

Claim 9

A method as claimed in claim 3 in which the protrusions on the insulating support member are formed by selectively etching one plane surface of the support member.

Claim 10

In a method of manufacturing a semiconductor circuit assembly having at least one discrete device comprising a semiconductor wafer with the device contacts on one major wafer face, each device forming at least one circuit element and being mounted with the contact-bearing wafer face supported by electrical interconnections comprising mounting pillars integral with conductors on an insulating substrate support member, the mounting pillars being between the device contacts and the conductors, the steps of forming protrusions on one plane surface of the insulating substrate member, said protrusions being integral with and of the same insulating material as said substrate member, and depositing material on said substrate from which the conductors are to be formed so as to extend over said protrusions and form mounting pillars on the exposed surface of the conductors, said mounting pillars having a form corresponding to that of said protrusions, forming said conductors on the insulating substrate and further including the step of initially underlaying portions of the conductors adjacent to the electrical interconnections with a layer of a different material before the other portions of the conductors are bonded to the substrate, said different material being subsequently removed before the wafer is mounted on the conductors.

Claim 11

In a method of manufacturing a semiconductor circuit assembly having at least one discrete device comprising a semiconductor wafer with the device contacts on one major wafer face, each device forming at least one circuit element and being mounted with the contact-bearing wafer face supported by electrical interconnections comprising mounting pillars integral with conductors on an insulating substrate support member, the mounting pillars being between the device contacts and the conductors, the steps of forming protrusions on one plane surface of the insulating substrate member, said protrusions being integral with and of the same insulating material as said substrate member, and depositing material on said substrate from which the conductors are to be formed so as to extend over said protrusions and form mounting pillars on the exposed surface of the conductors, said mounting pillars having a form corresponding to that of said protrusions, forming said conductors on the insulating substrate and further including the step of initially underlaying portions of the conductors adjacent to the electrical interconnections with a layer of a different material before the other portions of the conductors are bonded to the substrate, said different material being subsequently removed before the wafer is mounted on the conductors.

Claim 12

A method as claimed in claim 8 in which said different material beneath the conductors is removed by etching.

Claim 13

A method as claimed in claim 8 in which the conductors are of gold on a thin layer of nichrome, the underlayer for the portions of the conductor adjacent to the electrical interconnections is of copper, and the copper is removed by being etched with ferric chloride solution.