Apparatus for production of epitaxial films

Claim 1

An epitaxial deposition reaction system for deposition of an epitaxial film on a substrate, said reaction system comprising: a. a vertically disposed reaction vessel having seriatim a reaction chamber, a mixing chamber and a deposition chamber, b. means for creating an epitaxial reactant gas mixture in said reaction chamber comprising a source means disposed therein and feeding means connected to said reaction chamber for introducing a gas therein to thereby contact and volatilize said source, and gas feed means for adding doping material to said mixing chamber and causing contact with the gas mixture from said reaction chamber, c. means permitting fluid passage between said reaction, mixing and deposition chambers so that said epitaxial reactant gas mixture is admitted to said deposition chamber, d. a substrate supporting element in said deposition chamber opposed from the means permitting fluid passage so that the gas admitted to said deposition chamber passes over said substrates in said deposition chamber, causing the epitaxial film to be deposited on said substrates, 1. said supporting element being pyramidal in form, the apex of which extends towards and is in alignment with said means permitting fluid passage, 2. a flange extends laterally from the base of the pyramid whereby substrates may be supported on said flange and inclined against each associated facet of said pyramid, and 3. said support forms substantially the bottom wall of said deposition chamber, e. motive means operatively associated with said vessel for rotating said supporting element with respect to said deposition chamber, and f. heating means surrounding said reaction vessel, said heating means being adapted to maintain said chambers at temperatures different from one another.