Method for etching thin film materials by direct cathodic back sputtering

Abstract

Abstract Thin layers of material including dielectric films are etched or cleaned by placing them in a low pressure gas ambient, forming a plasma in the ambient, and establishing a periodic voltage between the layers and the plasma. One important application of the process is the formation of metal silicide contacts through small windows in a dielectric layer protecting the silicon surface. In one application, the metal is sputtered onto the exposed silicon at the same time that the surface is subjected to ion bombardment. The sputtering and etching rates are adjusted so that some of the sputtered metal reacts with the silicon upon impact and the unreacted metal is etched away.

Inventors

• 👤 Peter A Byrnes Jr
• 👤 Martin P Lepselter

Bibliographic Details