US3661526A
Expired / Lapsed
US
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Process for the catalytic growth of metastable crystals from the vapor phase
Assignee: Case Western Reserve University
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Filing: 1969-06-24
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Granted: 1972-05-09
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Expires: 1989-06-24
Abstract
Abstract There is provided a process for growing metastable crystals, e.g., diamonds, from seed crystals at sub-atmospheric pressures and temperatures in the range of from 800*-1,700* C. The process is characterized by the provision of a catalytic, mobile transfer medium as a layer upon the surface of the seed crystal and exposing the catalytically coated seed crystal to a gas containing the crystallizable material under the foregoing conditions of temperature and pressure.
Inventors
- 👤 John C Angus
- 👤 Nelson C Gardner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:46
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/04; C01; C01B; C01B32/00; C01B32/25; C01B32/26; C30B25/00; C30B25/02
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
14 words
A process in accordance with claim 1 in which the catalytic layer is nickel.
Claim 2
Dependent Claim
14 words
A process in accordance with claim 1 in which the catalytic layer is iron.
Claim 3
Dependent Claim
18 words
A process in accordance with claim 1 in which the catalytic layer is an iron alloy with nickel.
Claim 4
Dependent Claim
16 words
A process in accordance with claim 1 in which the catalytic layer is vacuum vapor deposited.
Claim 5
Dependent Claim
18 words
A process in accordance with claim 1 in which the catalytic layer forms a eutectic mixture with carbon.
Claim 6
Dependent Claim
21 words
A process in accordance with claim 12 in which the temperature of crystal epitaxy is at or above the eutectic temperature.
Claim 7
Dependent Claim
23 words
A process in accordance with claim 1 in which the pressure is in the range of 1 X 10 4 to 500 Torr.
Claim 8
Dependent Claim
37 words
A process in accordance with claim 1 in which the temperature is in the range of from about 1,000* to 1,350* C. and the pressure is in the range of from 1 X 104 to 500 Torr.
Claim 9
Dependent Claim
109 words
In a process for growing diamond metastably by epitaxy on a diamond seed crystal by decomposition of a hydrocarbon gas at a temperature in the range from about 800* to 1,700* C. and a pressure not exceeding 760 Torr, the improvement consisting essentially of interposing a liquid or mobile catalytic layer of iron, nickel, cobalt, or manganese less than 1 mm. thick between said diamond seed crystal and said hydrocarbon gas, said liquid or mobile layer covering essentially the entire surface over which growth is desired so as to provide a solvent medium for transferring in an ordered manner diamond-producing carbon atoms to the substantial exclusion of stable carbides.
Claim 10
Dependent Claim
110 words
A solid-liquid contacting process for growing diamond on diamond seed crystals which comprises maintaining a molten liquid or mobile layer of iron, nickel, cobalt, or manganese catalyst having a thickness of less than about 1 mm. over substantially the entire surface over which growth is desired, and contacting said layer with a vaporizable hydrocarbon under the conditions of temperature and pressure of diamond growth, said hydrocarbon yielding a material soluble in said layer under said conditions and epitaxially crystallizable on said seed crystal to the exclusion of non-diamond producing atoms, said temperature being in the range from about 800* to 1,700* C. and said pressure being less than 760 Torr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-09 | 1975-11-08 | 1976-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-09 | 1979-11-08 | 1980-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-09 | 1983-11-08 | 1984-05-09 | $7700.00 | Window Closed / Lapsed |