US3649883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a recombination ring
Assignee: Motorola Solutions Inc
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Filing: 1970-08-17
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Granted: 1972-03-14
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Expires: 1990-08-17
Abstract
Abstract A transistor geometry is disclosed utilizing the interdigitation of the base area for increasing the effective base-collector junction periphery. A recombination ring is provided comprising in part parts of the base and collector for dissipating minority carriers injected into the collector region of the transistor from the base region. A metal contact adheres to the surface of the transistor in electrical contact across the base-collector junction.
Inventors
- 👤 Lawrence G Augustine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 18:40
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/63
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
189 words
A semiconductor device comprising: a body of semiconductor having a surface and containing a transistor having alternate first and opposite coNductivity type regions for emitter, base, and collector regions in superposed relationship respectively; said base and emitter regions having a plurality of interdigitated regions joined as an integral unit at one end and having a collector portion of said body interposed between adjacent regions of said base and surrounding the remaining regions of said base and said collector portions of said body operating as a recombination ring for said adjacent regions of said base; said emitter having a plurality of interdigitated regions joined as an integral unit at one end and being in superposed relationship with corresponding regions of said base; a metallization layer having at least a first portion adherent to said surface and covering portions of said recombination region and adjacent interdigitated regions of said base and being electrically connected to said recombination region and adjacent interdigitated regions of said base for operating as a base contact; a plurality of contacts attached to said emitter and collector regions respectively; and a passivating layer adherent to said surface.
Claim 2
Dependent Claim
189 words
A semiconductor device comprising: a body of semiconductor having a surface and containing a transistor having alternate first and opposite coNductivity type regions for emitter, base, and collector regions in superposed relationship respectively; said base and emitter regions having a plurality of interdigitated regions joined as an integral unit at one end and having a collector portion of said body interposed between adjacent regions of said base and surrounding the remaining regions of said base and said collector portions of said body operating as a recombination ring for said adjacent regions of said base; said emitter having a plurality of interdigitated regions joined as an integral unit at one end and being in superposed relationship with corresponding regions of said base; a metallization layer having at least a first portion adherent to said surface and covering portions of said recombination region and adjacent interdigitated regions of said base and being electrically connected to said recombination region and adjacent interdigitated regions of said base for operating as a base contact; a plurality of contacts attached to said emitter and collector regions respectively; and a passivating layer adherent to said surface.
Claim 3
Dependent Claim
29 words
A semiconductor device as recited in claim 1, wherein said metallization layer comprises: a first layer of nichrome; a second layer of tungsten; and a third layer of gold.
Claim 4
Dependent Claim
24 words
A semiconductor device as recited in claim 1, wherein said metallization layer comprises: a first layer of nichrome; and a second layer of aluminum.
Claim 5
Dependent Claim
45 words
A semiconductor device as recited in claim 1 wherein said emitter region is offset within said base region for providing said base region with a major section and a minor section and said metallization layer covering said major base region and said adjacent body portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-14 | 1975-09-13 | 1976-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-14 | 1979-09-13 | 1980-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-14 | 1983-09-13 | 1984-03-14 | $7700.00 | Window Closed / Lapsed |