US3615934A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulated-gate field-effect device having source and drain regions formed in part by ion implantation and method of making same
Assignee: Raytheon Co
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Filing: 1967-10-30
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Granted: 1971-10-26
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Expires: 1987-10-30
Abstract
Abstract Field effect device having diffused major source and drain regions spaced from each other on a common surface of a semiconductor body with insulated gate member disposed on same surface and spaced from and between the source and drain regions, and shallow regions formed by ion implantation using the gate member as a mask extending from the periphery of the gate member to the source and drain regions.
Inventors
- 👤 Robert W Bower
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 01:29
CPC Classifications
H; H10; H10P; H10P95/00; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/052; Y10S148/053; Y10S148/113
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
18 words
The invention according to claim 1 wherein said conductivity-type-determining impurities are introduced into said semiconductor body by diffusion.
Claim 2
Independent Claim
165 words
The method of fabricating an insulated-gate field-effect device comprising the steps of: a. diffusing spaced source and drain regions of a first conductivity-type in a semiconductor body of opposite conductivity-type while leaving a channel region between said source and drain regions, said source, drain and channel regions having surfaces disposed on a common surface of said semiconductor body; b. forming an insulating layer at least on said surface of said channel region; c. forming a gate electrode member on a portion of said insulating layer on said channel region and laterally spaced from said source and drain regions; d. and implanting ions of a conductivity-type-determining impurity in portions of said channel region through portions of said insulating layer other than those portions covered by said gate electrode member to thereby form discrete regions of said first type of conductivity in said channel region, said discrete regions extending respectively from adjacent the region under said gate electrode member to and contacting said source and drain regions.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-25 | 1975-04-26 | 1975-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-25 | 1979-04-26 | 1979-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-25 | 1983-04-26 | 1983-10-26 | $7700.00 | Window Closed / Lapsed |