Transducer apparatus and system utilizing insulated gate semiconductor field effect devices

Claim 2

a heavily doped source region of opposite conductivity type formed in said substrate;

Claim 3

a channel connecting said source and drain electrodes b. a power source connected to said source electrode for producing a preselected current flow through said channel; c. a selectively variable signal source connected to said gate electrode for selectively varying the impedance of said field-effect transistor; d. an output circuit connected to said drain electrode; and e. mechanical means connected to said field-effect transistor for imparting a uniaxial stress upon said field-effect transistor and thereby proportionally modulate the current flow through said channel.

Claim 5

A transducer system, comprising in combination; a support member; b. first and second elongated piezoresistive semiconductor members of one conductivity type, each having at least one substantially flat surface, said first and second members being connected at one end to said support member so that said flat surfaces respectively lie in perpendicular planes and having their other ends free to move with respect to their respective one end, c. a pair of insulated gate piezoresistive semicOnductor field-effect devices respectively formed in said first and second members, each of which include

Claim 6

a heavily doped drain region of said opposite conductivity type formed in said substrate in close proximity to but spaced from said source region;

Claim 7

a channel layer formed within its respective semiconductor member connecting its respective source and drain regions;

Claim 8

a layer of insulating material contiguous with an overlying its respective channel layer and portions of its respective source and drain regions;

Claim 9

The transducer system of claim 3 wherein said mechanical means is a phonograph needle connected to said members remote from said one end thereof, whereby said needle is adapted to exert mechanical stress upon said members.

Claim 10

a channel layer formed within said substrate connecting said source and drain regions;

Claim 11

a layer of insulating material contiguous with and overlying said channel layer and portions of said source and drain regions;

Claim 12

The transducer system of claim 3 wherein said first and second members are each substantially T-shaped with the cap of the T being connected to said support member and the stem of the T being free to move with respect to said cap of the T.

Claim 13

a first conductive layer contiguous with and overlying its respective insulating layer for providing the gate electrode of its respective field-effect device;

Claim 14

second and third conductive layers respectively contiguous with and overlying the remaining portions of its respective source and drain regions for respectively providing the source and drain electrodes of its respective field-effect device; d. a voltage source coupled between the source and drain electrodes of each of said field-effect devices for providing a predetermined voltage differential between respective ones of said source and drain regions and thereby producing a preselected source-drain conductance of each of said field-effect devices; e. a selectively variable signal source coupled to the gate electrodes of each of said field-effect devices for selectively varying the impedance of said field-effect devices; and f. mechanical means connected to the semiconductor members of each of said field-effect devices for imparting a uniaxial stress upon said semiconductor members so as to produce a corresponding stress upon the channel layers of each of said field-effect devices and thereby proportionally modulating the source-drain conductance of each of said field-effect devices.

Claim 15

The transducer system of claim 3 wherein said first and second members are each composite structures comprising a flexible layer underlying its respective piezoresistive semiconductor member.

Claim 16

a first conductive layer contiguous with an overlying said insulating layer for providing the gate electrode of said device; and

Claim 17

second and third conductive layers respectively contiguous with and overlying the remaining portions of said source and drain regions for respectively providing the source and drain electrodes of said device; b. a voltage source coupled between said source and drain electrodes for providing a predetermined voltage differential between said source and drain regions and thereby producing a preselected source-drain conductance of said device; c. a selectivEly variable signal source coupled to said gate electrode for selectively varying the impedance of said field-effect device; and d. mechanical means connected to said semiconductor substrate for imparting a uniaxial stress upon said semiconductor substrate so as to produce a corresponding stress upon said channel layer and thereby proportionally modulating the source-drain conductance of said field-effect device.

Claim 18

A transducer apparatus comprising in combination: a. an insulated gate piezoresistive semiconductor field-effect device including

Claim 19

The transducer apparatus of claim 7 wherein a. said semiconductor substrate is elongated and has one of its ends connected to a support member and its other end free to move with respect to said one end; and wherein b. the remaining elements of said field-effect device are located between the ends of said elongated semiconductor substrate.

Claim 20

The transducer apparatus of claim 8 wherein said mechanical means is a diaphragm connected to said semiconductor substrate remote from said one end thereof, whereby said diaphragm responds to air vibrations and exerts mechanical stresses upon said semiconductor substrate.

Claim 21

The transducer apparatus of claim 8 wherein said mechanical means is a phonograph needle connected to said semiconductor substrate remote from said one end thereof, whereby said needle is adapted to exert mechanical stresses upon said semiconductor substrate.

Claim 22

The transducer apparatus of claim 10 wherein said semiconductor substrate has at least two major surfaces that respectively lie in perpendicular planes, and wherein each of said major surfaces has an insulated gate piezoresistive semiconductor field-effect device formed thereon.