Patent US6797000B2 successfully refreshed from Google Patents.
US3607697A
Expired / Lapsed
US
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Sputtering process for making a film of silica and silicon nitride
Assignee: Sprague Electric Co
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Filing: 1968-04-18
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Granted: 1971-09-21
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Expires: 1988-04-18
Abstract
Abstract Formation of a sputtered film on a silicon substrate, said film being a graded composition ranging from pure SiO2 to pure Si3N4 and the composition resulting therefrom.
Inventors
- 👤 George A Shirn
- 👤 Alan Janus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 22:48
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0084; H; H10; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/067; Y10S148/118
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
12 words
The method of claim 1 wherein said silicon target is polycrystalline silicon.
Claim 2
Dependent Claim
21 words
The method of claim 1 wherein the pressure during sputtering is maintained between 10 3 and 5 X 10 3 Torr.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |