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US3607449A
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US
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Method of forming a junction by ion implantation
Assignee: Hitachi Ltd
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Filing: 1969-09-23
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Granted: 1971-09-21
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Expires: 1989-09-23
Abstract
Abstract Disclosed is a method of forming a PN junction comprising the steps of implanting impurity ions into an insulating layer formed on the surface of a semiconductor substrate and then diffusing the implanted impurity ions into the surface layer of the semiconductor substrate thereunder.
Inventors
- 👤 Takashi Tokuyama
- 👤 Takao Miyazaki
- 👤 Takashi Tsuchimoto
- 👤 Tadahisa Morita
- 👤 Takahide Ikeda
- 👤 Shigeru Nishimatsu
- 👤 Hisumi Sano
- 👤 Masatada Horiuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:57
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/30; H10P30/00; H10P30/40; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P32/20; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
20 words
A method according to claim 1, wherein said first conductivity type is an opposite type to said second conductivity type.
Claim 2
Dependent Claim
28 words
A method according to claim 1, wherein said insulating layer is formed of a material selected from the group consisting of silicon oxide, aluminum oxide and silicon nitride.
Claim 3
Independent Claim
111 words
A method of forming a junction by ion implantation comprising the steps of: a. forming an insulating layer on a surface of a semiconductor substrate of a first conductivity type; b. forming a recessed portion in said insulaTing layer; c. implanting impurity ions into the whole surface of said insulating layer, the impurity ions determining a second conductivity type when transferred into the semiconductor substrate; and d. heating the semiconductor substrate thus processed to cause the diffusion of the impurity stored in the recessed portion of the insulating film into surface portion of the semiconductor substrate to thereby form a second conductivity-type region in the substrate with a PN junction therebetween.
Claim 4
Dependent Claim
20 words
A method according to claim 4, wherein said first conductivity type is an opposite type to said second conductivity type.
Claim 5
Dependent Claim
28 words
A method according to claim 4, wherein said insulating layer is formed of a material selected from the group consisting of silicon oxide, aluminum oxide and silicone nitride.
Claim 6
Independent Claim
106 words
A method of forming a junction by ion implantation comprising the steps of: a. forming an insulating layer on a surface of a semiconductor substrate of a first conductivity type; b. implanting impurity ions into the surface portion of the insulating layer, the impurity ions determining a second conductivity type when transferred into the semiconductor substrate; c. removing said insulating layer except a predetermined portion; and d. heating the semiconductor substrate thus processed to cause diffusion of the impurity stored in the insulating layer into the surface portion of the semiconductor substrate to thereby form a second conductivity-type region in the substrate with a junction therebetween.
Claim 7
Dependent Claim
16 words
A method according to claim 7, wherein said heating step is done in an oxidizing atmosphere.
Claim 8
Dependent Claim
28 words
A method according to claim 7, wherein said insulating layer is formed of a material selected from the group consisting of silicon oxide, aluminum oxide and silicon nitride.
Claim 9
Dependent Claim
20 words
A method according to claim 7, wherein said first conductivity type is an opposite type to said second conductivity type.
References Cited (Backward Citations)
US3328210A
Cited
US3489622A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |