Abstract A semiconductor device has a sensor of thermistor material in thermally conductive contact with an electrode of the device at a surface common to the electrode and the sensor for intimate thermal sensing of the temperature of the electrode. Because of its small mass and intimate contact with the electrode, the sensor has a rapid thermal response (small time constant) relative to the rate of change of the device temperature so that the temperature of the sensor will essentially follow the temperature of the electrode without significant thermal lag. In a method of sensing the temperature of the device the sensor of thermistor material is placed in thermally conductive contact with the electrode of the device and the resistance thereof is sensed as a predetermined function of the temperature of the sensor. At a preselected temperature of the sensor the current flowing through the device is protectively reduced.
A thermally protected semiconductor device as set forth in claim 1 wherein said thermistor material has a resistance characteristic having a transition temperature at which the resistance of the material changes relatively abruptly.
Claim 2
Dependent Claim
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A thermally protected semiconductor device as set forth in claim 1 which includes a gate terminal and wherein said sensor has one terminal thereof connected to said gate terminal.
Claim 3
Dependent Claim
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A thermally protected semiconductor device as set forth in claim 3 wherein said sensor is of PTC thermistor material and the terminals of the sensor are connected in a series circuit with the gate terminal for controlling the flow of current thereto.
Claim 4
Dependent Claim
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A thermally protected semiconductor device as set forth in claim 4 wherein said sensor is of NTC thermistor material and the terminals of the sensor are connected in a circuit for diverting the flow of current from said gate terminal.