US3600218A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for depositing insulating films of silicon nitride and aluminum nitride
Assignee: International Business Machines Corp
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Filing: 1968-05-15
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Granted: 1971-08-17
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Expires: 1988-05-15
Abstract
Abstract A SUBSTRATE AND SOURCE, OF SILICON (SI) OR ALUMINUM (AL), ARE POSITIONED WITHIN A NITROGEN-CONTAINING ATMOSPHERE OF LESS THAN 20 MICRONS. RADIO-FREQUENCY ENERGY IS APPLIED ACROSS THE SUBSTRATE AND SOURCE TO GENERATE A PLASMA CONTAINING SOURCE MATERIAL, AND NITROGEN WHICH REACT SO AS TO DEPOSIT A THIN INSULATING FILM, E.G., OF SILICON NITRIDE (SI3N4) OR ALUMINUM NITRIDE (ALN), RESPECTIVELY, ON THE SUBSTRATE SURFACE. PREFERABLY, THE SUBSTRATE IS MAINTAINED IN EXCESS OF 300*C. DURING THE DEPOSITION PROCESS.
Inventors
- 👤 William B Pennebaker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:55
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/053; Y10S148/113; Y10S148/114; Y10S148/169
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-16 | 1975-02-15 | 1975-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-16 | 1979-02-15 | 1979-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-16 | 1983-02-15 | 1983-08-17 | $7700.00 | Window Closed / Lapsed |