US3599000A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor optoelectronic logic element utilizing the gunn effect
Assignee: Hitachi Ltd
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Filing: 1969-03-13
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Granted: 1971-08-10
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Expires: 1989-03-13
Abstract
Abstract A semiconductor device for use as a logic element wherein a Gunn effect element is placed in optical coupling relationship with a plurality of semiconductive light emissive elements on a common semiconductor substrate. The Gunn effect element exhibits a photoconduction effect when irradiated by the light from the light emissive elements to provide AND or OR logic function depending upon the intensity of the irradiating light.
Inventors
- 👤 Hisayoshi Yanai
- 👤 Takayuki Sugeta
- 👤 Masatoshi Migitaka
- 👤 Hisao Nakashima
- 👤 Yasuo Matsukura
- 👤 Kuniichi Ohta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:33
CPC Classifications
G; G02; G02F; G02F3/00; H; H10; H10F; H10F55/00; H10F55/20; H10F55/205; H10F55/207
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
95 words
A semiconductor device comprising a gallium-arsenide semiconductor body of the bulk negative resistance type operatively exhibiting a Gunn oscillation upon the application thereto of an electric field in excess of a threshold value along a given direction; means for applying to said body a biasing voltage which normally provides an electric field below said threshold value in said body along said given direction; and first and second light-emissive gallium-arsenide semiconductor elements located adjacent said semiconductor body for irradiating a part of said sEmiconductor body with light capable of inducing a photoconduction effect in said body.
Claim 2
Dependent Claim
95 words
A semiconductor device comprising a gallium-arsenide semiconductor body of the bulk negative resistance type operatively exhibiting a Gunn oscillation upon the application thereto of an electric field in excess of a threshold value along a given direction; means for applying to said body a biasing voltage which normally provides an electric field below said threshold value in said body along said given direction; and first and second light-emissive gallium-arsenide semiconductor elements located adjacent said semiconductor body for irradiating a part of said sEmiconductor body with light capable of inducing a photoconduction effect in said body.
Claim 3
Dependent Claim
142 words
A semiconductor device comprising a semiconductor body of the bulk effect type operatively exhibiting Gunn oscillation upon the application thereto of an electric field in excess of a threshold value, means for applying a biasing signal to said body for normally providing an electric field in said body below said threshold value, first and second light-emissive devices disposed adjacent said body for irradiating parts of said body with light emitted thereby, each of said light-emissive devices further including a controlling Gunn effect element, a laser element coupled to said controlling Gunn effect element, and means for biasing said controlling Gunn effect element and said laser element to a value which is sufficient to cause said laser element to emit and not to emit laser light depending upon the presence and absence of high field domains in said controlling Gunn effect element, respectively.
Claim 4
Dependent Claim
142 words
A semiconductor device comprising a semiconductor body of the bulk effect type operatively exhibiting Gunn oscillation upon the application thereto of an electric field in excess of a threshold value, means for applying a biasing signal to said body for normally providing an electric field in said body below said threshold value, first and second light-emissive devices disposed adjacent said body for irradiating parts of said body with light emitted thereby, each of said light-emissive devices further including a controlling Gunn effect element, a laser element coupled to said controlling Gunn effect element, and means for biasing said controlling Gunn effect element and said laser element to a value which is sufficient to cause said laser element to emit and not to emit laser light depending upon the presence and absence of high field domains in said controlling Gunn effect element, respectively.
Claim 5
Dependent Claim
146 words
The semiconductor device according to claim 2, wherein said controlling Gunn effect element has a gate electrode, said biasing means normally providing in said Gunn effect element a field below a threshold value necessary to generate the high field domain and at the same time providing a current in said laser element whose level is varied between a value below a threshold level necessary to generate laser light and a value above the threshold level in accordance with the change in the state of the absence and the presence of the high field domain in said Gunn effect element, and triggering means coupled to said gate electrode for supplying a control pulse to said gate electrode to allow said Gunn effect element to generate the high field domain therein, whereby pulsed laser light is obtained from said laser element under the control of said triggering means.
Claim 6
Dependent Claim
26 words
The semiconductor device according to claim 3, wherein said controlling Gunn element and said laser element are connected to said biasing means in a parallel relationship.
Claim 7
Dependent Claim
28 words
The semiconductor device according to claim 2, wherein said semiconductor body, said controlling Gunn effect element, and said laser element are all provided on a common semiconductor substrate.
Claim 8
Dependent Claim
28 words
The semiconductor device according to claim 5, wherein said semiconductor body, said controlling Gunn effect element, said laser element, and said semiconductor substrate are all formed of GaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-09 | 1975-02-08 | 1975-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-09 | 1979-02-08 | 1979-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-09 | 1983-02-08 | 1983-08-10 | $7700.00 | Window Closed / Lapsed |