US3594619A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Face-bonded semiconductor device having improved heat dissipation
Assignee: NEC Corp
•
Filing: 1968-09-25
•
Granted: 1971-07-20
•
Expires: 1988-09-25
Abstract
Abstract A semiconductor device is described of the face bond type wherein beam leads in electrical contact with a semiconductor circuit located in a semiconductor pellet with a pellet region located between the circuit and an edge of the pellet outwardly project in cantilever fashion from the pellet edge. Special heatconducting contacts are formed in between the beam leads in the pellet region to provide an improved heat-dissipating device.
Inventors
- 👤 Mototaka Kamoshida
- 👤 Takashi Okada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:39
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/10; H10W20/00; H10W20/40; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
27 words
The semiconductor device claimed in claim 1, wherein said first metallic film strips are beam leads outwardly projecting in cantilever fashion from the edge of said pellet.
References Cited (Backward Citations)
US2980860A
Cited
US3271634A
Cited
US3400311A
Cited
US3388301A
Cited
US3283224A
Cited
US3458925A
Cited
US3390308A
Cited
US3414775A
Cited
US3470611A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-19 | 1975-01-18 | 1975-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-19 | 1979-01-18 | 1979-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-19 | 1983-01-18 | 1983-07-20 | $7700.00 | Window Closed / Lapsed |