Patent US1150572A successfully refreshed from Google Patents.
US3584270A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High speed switching rectifier
Assignee: Westinghouse Electric Corp
•
Filing: 1968-03-13
•
Granted: 1971-06-08
•
Expires: 1988-03-13
Abstract
Abstract This disclosure sets forth a four region, three junction, two terminal semiconductor device, designated as a reverse switching rectifier, in which a PNPN (or NPNP) device is surrounded by an NP (or PN) device. Electrically, the NP device is in parallel with the PNPN device. In the device so constructed, breakover and switching occurs in only the PNPN (or NPNP) device by either an avalanche or punch-through mechanism.
Inventors
- 👤 John Philips
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 18:40
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/131; H10D84/135; H10D84/136; H10D88/00; H10D99/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
37 words
The device of claim 1 in which the PN junction between the first and second regions of the peripheral portion is an extension of the PN junction between the second and third regions of the central portion.
Claim 2
Dependent Claim
30 words
The device of claim 2 in which the first region of the peripheral portion is from 10 percent to 50 percent thicker than the second region of the central portion.
Claim 3
Dependent Claim
30 words
The device of claim 2 in which the first region of the peripheral portion is from 30 percEnt to 50 percent thicker than the second region of the central portion.
Claim 4
Dependent Claim
32 words
The device of claim 1 in which the body of semiconductor material containing the device is cylindrical and the central portion is cylindrical and surrounded by a peripheral portion which is cylindrical.
Claim 5
Dependent Claim
284 words
A reverse switching rectifier semiconductor device consisting of a body of semiconductor material, said body having a central portion and a peripheral portion, said peripheral portion surrounding said central portion, said central portion consisting of four regions of alternate type semiconductivity, said first and said third regions being of a first-type of semiconductivity and said second and said fourth regions being of a second-type of semiconductivity, a PN junction between each of said regions, said peripheral portion consisting of a first region and a second region, said first and said second regions being of opposite type of semiconductivity, a PN junction between said first and said second region, said first region of said peripheral portion being of the same type of semiconductivity as the second and fourth regions of said central portion and said second region of said peripheral portion being of the same type of semiconductivity as said first and third regions of said central portion and means for electrically shorting said first region of said central portion to only said first region of said peripheral portion and said fourth region of said central portion to only said second portion of said peripheral portion, the third region of said central portion having a predetermined thickness and being doped to provide a given resistivity, whereby upon applying a potential between said means for electrically shorting the regions, so as to reverse bias the PN junction between the second and the third regions, whereby to cause a depletion layer to form, said depletion expanding in proportion to said reverse bias potential so as to cause the device to switch at a selected voltage dependent upon said thickness and the doping level of said third region.
Claim 6
Dependent Claim
19 words
The device of claim 5, wherein the thickness of said third region is from 0.1 mil to 20 mils.
Claim 7
Dependent Claim
20 words
The device of claim 6 wherein the doping in said third region provides from 1013 to 1019 atoms per cc.
Claim 8
Dependent Claim
62 words
A semiconductor device consisting of; a body of semiconductor material, said body having a central portion and a peripheral portion, said peripheral portion completely surrounding said central portion, said central portion consisting of a four region, three junction switching device, said peripheral portion consisting of a junction diode, said switching device being connected in a parallel circuit relationship with said junction diode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-07 | 1974-12-07 | 1975-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-07 | 1978-12-07 | 1979-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-07 | 1982-12-07 | 1983-06-08 | $7700.00 | Window Closed / Lapsed |