US3577047A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect device
Assignee: International Business Machines Corp
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Filing: 1969-01-15
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Granted: 1971-05-04
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Expires: 1989-01-15
Abstract
Abstract A field-effect device is provided which comprises a field effect transistor of the insulated gate type. The device is capable of being used as a photodetector with a gain greater than unity. To this end, the transistor is biased in the ''''off'''' state by a substrate potential (source-to-substrate) resulting from the provision of an external voltage supply in the source-tosubstrate loop. Upon the radiation of the source and drain junctions in the transistor, a current is caused to flow between the source and drain electrodes which result in a current gain in excess of unity.
Inventors
- 👤 George Cheroff
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 08:14
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; H10D; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
169 words
A radiant energy responsive circuit comprising: an insulated gate field-effect transistor of the type including a substrate body of semiconductor material of one conductivity type having at one surface thereof, first and second spaced regions of a conductivity type opposite to said one conductivity type to form first and second junctions; a gate electrode mounted above said one surface and insulated therefrom, said gate electrode bridging said first and second regions; means in circuit with said junctions for biasing one of said junctions in the forward direction and the other of said junctions in the reverse direction to thereby provide source and drain electrodes respectively; means for providing a potential between said source and said substrate to produce a source-to-substrate potential to bias said transistor in the off state; and means for providing radiant energy to said junctions whereby upon the incidence of radiant energy on said junctions, the current between said source and drain electrodes is of an amount sufficient to provide a current gain greater than unity.
Claim 2
Dependent Claim
32 words
A circuit as defined in claim 1 and including a resistance in circuit with said substrate and said potential producing means for biasing said radiant energy responsive circuit in the nonconductive state.
Claim 3
Dependent Claim
37 words
A circuit as defined in claim 3 and including a channel at said one surface connecting said first and second regions which includes an inversion layer of the same conductivity type as said first and second regions.
Claim 4
Dependent Claim
32 words
A circuit as defined in claim 3 wherein said gate electrode is transparent to said radiant energy, and said radiant energy is passed through said gate electrode and applied to said channel.
References Cited (Backward Citations)
US3459944A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-03 | 1974-11-02 | 1975-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-03 | 1978-11-02 | 1979-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-03 | 1982-11-02 | 1983-05-04 | $7700.00 | Window Closed / Lapsed |