US3569757A
Expired / Lapsed
US
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Acceleration system for implanting ions in specimen
Assignee: Raytheon Co
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Filing: 1968-10-04
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Granted: 1971-03-09
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Expires: 1988-10-04
Abstract
Abstract A two-dimensional double deflection system for ion implantation of semiconductor devices comprises deflecting an ion beam in orthogonal directions such that the ion incidence angle is always constant with respect to a target. The beam is first deflected in a direction away from a reference axis and thereafter is redeflected along a path which lies parallel to the reference axis. The second double deflection is similarly performed but orthogonal to the first double deflection. The beam can thus be swept over the entire target for uniform device implantation characteristics.
Inventors
- 👤 George R Brewer
- 👤 Charles R Buckey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 10:23
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-08 | 1974-09-07 | 1975-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-08 | 1978-09-07 | 1979-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-08 | 1982-09-07 | 1983-03-09 | $7700.00 | Window Closed / Lapsed |