US3472684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for producing epitaxial crystalline layers,particularly semiconductor layers
Assignee: Siemens AG
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Filing: 1966-01-26
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Granted: 1969-10-14
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Expires: 1986-01-26
Abstract
No abstract record available.
Inventors
- 👤 Albert Walther
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:13
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US2631948A
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US2887088A
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US3058812A
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US3053638A
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US3160522A
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US3240623A
Cited
US3233578A
Cited
US3301213A
Cited
US3381114A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-10-13 | 1973-04-14 | 1973-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-10-13 | 1977-04-14 | 1977-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-10-13 | 1981-04-14 | 1981-10-14 | $7700.00 | Window Closed / Lapsed |