US3392056A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making single crystal films and the product resulting therefrom
Assignee: Irc Inc
•
Filing: 1964-10-26
•
Granted: 1968-07-09
•
Expires: 1984-10-26
Abstract
No abstract record available.
Inventors
- 👤 Nicholas J Maskalick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:29
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B23/00; C30B23/02; C30B23/025; H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/135; Y10S148/15; Y10S148/169
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
107 words
A METHOD OF FORMING ON THE SURFACE OF SAPPHIRE A THIN FILM OF A SINGLE CRYSTALLINE MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND TUNGSTEN COMPRISING THE STEPS OF PLACING THE SUBSTRATE IN AN ENCLOSED CHAMBER, EVACUATING AND MAINTAINING SAID CHAMBER AT A PRESSURE OF NO GREATER THAN 10**-7 MILLIMETERS OF MERCURY, HEATING SAID SUBSTRATE TO A TEMPERATURE OF BETWEEN 1200*C. AND 1350*C. FOR FORMING A FILM OF SINGLE CRYSTALLINE SILICON AND BETWEEN 1300*C. AND 1500*C. FOR FORMING A FILM OF SINGLE CRYSTALLINE TUNGSTEN, EVAPORATING A CHARGE OF SAID MATERIAL IN SAID CHAMBER, AND CONDENSING THE VAPORS OF SAID MATERIAL ON A SURFACE OF SAID SUBSTRATE.
Claim 2
Independent Claim
107 words
A METHOD OF FORMING ON THE SURFACE OF SAPPHIRE A THIN FILM OF A SINGLE CRYSTALLINE MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND TUNGSTEN COMPRISING THE STEPS OF PLACING THE SUBSTRATE IN AN ENCLOSED CHAMBER, EVACUATING AND MAINTAINING SAID CHAMBER AT A PRESSURE OF NO GREATER THAN 10**-7 MILLIMETERS OF MERCURY, HEATING SAID SUBSTRATE TO A TEMPERATURE OF BETWEEN 1200*C. AND 1350*C. FOR FORMING A FILM OF SINGLE CRYSTALLINE SILICON AND BETWEEN 1300*C. AND 1500*C. FOR FORMING A FILM OF SINGLE CRYSTALLINE TUNGSTEN, EVAPORATING A CHARGE OF SAID MATERIAL IN SAID CHAMBER, AND CONDENSING THE VAPORS OF SAID MATERIAL ON A SURFACE OF SAID SUBSTRATE.
References Cited (Backward Citations)
US3312572A
Cited
US3335038A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-07-09 | 1972-01-08 | 1972-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-07-09 | 1976-01-08 | 1976-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-07-09 | 1980-01-08 | 1980-07-09 | $7700.00 | Window Closed / Lapsed |