US3355935A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor systems for measuring streeses
Assignee: Thales SA
•
Filing: 1963-07-24
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Granted: 1967-12-05
•
Expires: 1983-07-24
Abstract
No abstract record available.
Inventors
- 👤 Grosvalet Jean
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 17:22
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50; G; G01; G01R; G01R31/00; G01R31/26; G01R31/2644; H04; H04R; H04R23/00; H10D30/00; H10D30/80; H10D62/00; H10D62/10; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
126 words
A SYSTEM COMPRISING: A FIELD EFFECT STRUCTURE HAVING A SOURCE, A DRAIN, A GATE AND A SURFACE FOR RECEIVING STRESS, AND SAID STRUCTURE HAVING A CONDUCTING CHANNEL IN WHICH MAJORITY CARRIERS MOVE IN RESPONSE TO AN ENERGY SOURCE, THIS CHANNEL BEING BOUND BY A SPACE CHARGE CREATED BY AN ELECTRIC FIELD PRODUCED FROM SAID GATE; MEANS FOR APPLYING A VOLTAGE BETWEEN SAID SOURCE AND SAID DRAIN AND MEANS FOR MEASURING THE VARIATION OF THE CURRENT FLOWING THROUGH SAID STRUCTURE, AS A FUNCTION OF THE APPLIED STRESS; MEANS FOR APPLYING A FURTHER VOLTAGE BETWEEN SAID SOURCE AND SAID GATE FOR CANCELLING THE CURRENT FLOWING THROUGH SAID STRUCTURE AS A FUNCTION OF SAID STRESS, SAID FURTHER VOLTAGE PRODUCING SAID ELECTRIC FIELD; AND MEANS FOR MEASURING SAID FURTHER VOLTAGE.
Claim 2
Independent Claim
126 words
A SYSTEM COMPRISING: A FIELD EFFECT STRUCTURE HAVING A SOURCE, A DRAIN, A GATE AND A SURFACE FOR RECEIVING STRESS, AND SAID STRUCTURE HAVING A CONDUCTING CHANNEL IN WHICH MAJORITY CARRIERS MOVE IN RESPONSE TO AN ENERGY SOURCE, THIS CHANNEL BEING BOUND BY A SPACE CHARGE CREATED BY AN ELECTRIC FIELD PRODUCED FROM SAID GATE; MEANS FOR APPLYING A VOLTAGE BETWEEN SAID SOURCE AND SAID DRAIN AND MEANS FOR MEASURING THE VARIATION OF THE CURRENT FLOWING THROUGH SAID STRUCTURE, AS A FUNCTION OF THE APPLIED STRESS; MEANS FOR APPLYING A FURTHER VOLTAGE BETWEEN SAID SOURCE AND SAID GATE FOR CANCELLING THE CURRENT FLOWING THROUGH SAID STRUCTURE AS A FUNCTION OF SAID STRESS, SAID FURTHER VOLTAGE PRODUCING SAID ELECTRIC FIELD; AND MEANS FOR MEASURING SAID FURTHER VOLTAGE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-12-04 | 1971-06-05 | 1971-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-12-04 | 1975-06-05 | 1975-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-12-04 | 1979-06-05 | 1979-12-05 | $7700.00 | Window Closed / Lapsed |