US3351827A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Opto-electronic semiconductor with improved emitter-region
Assignee: US Philips Corp
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Filing: 1965-08-13
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Granted: 1967-11-07
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Expires: 1985-08-13
Abstract
No abstract record available.
Inventors
- 👤 Newman Peter Colin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10F; H10F55/00; H10F55/20; H10F55/25; H10F55/255; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/174; H10P95/00; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/056; Y10S148/065; Y10S148/067
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
100 words
AN OPTO-ELECTRONIC TRANSISTOR FORMED OF A MONOCRYSTALLINE SEMICONDUCTIVE MATERIAL, SAID TRANSISTOR HAVING A BASE REGION OF ONE CONDUCTIVITY TYPE, AN EMITTER REGION OF THE OTHER CONDUCTIVITY TYPE FORMING WITH SAID BASE REGION A CHARGE CARRIER-TO-PHOTON CONVERSION P-N JUNCTION FOR EMITTING PHOTONS INTO SAID BASE REGION, AND A COLLECTOR REGION OF THE OTHER CONDUCTIVITY TYPE FORMING A PHOTON-TOCHARGE CARRIER CONVERSION P-N JUNCTION WITH SAID BASE REGION FOR COLLECTING PHOTONS FROM SAID BASE REGION, SAID P-N JUNCTIONS BEING SPACED APART BY AT LEAST ONE DIFFUSION LENGTH FOR CHARGE CARRIERS, AND SAID EMITTER REGION HAVING MAJOR CONDUCTIVITY TYPE DETERMINING IMPURITIES IN A PRO-
Claim 2
Dependent Claim
100 words
AN OPTO-ELECTRONIC TRANSISTOR FORMED OF A MONOCRYSTALLINE SEMICONDUCTIVE MATERIAL, SAID TRANSISTOR HAVING A BASE REGION OF ONE CONDUCTIVITY TYPE, AN EMITTER REGION OF THE OTHER CONDUCTIVITY TYPE FORMING WITH SAID BASE REGION A CHARGE CARRIER-TO-PHOTON CONVERSION P-N JUNCTION FOR EMITTING PHOTONS INTO SAID BASE REGION, AND A COLLECTOR REGION OF THE OTHER CONDUCTIVITY TYPE FORMING A PHOTON-TOCHARGE CARRIER CONVERSION P-N JUNCTION WITH SAID BASE REGION FOR COLLECTING PHOTONS FROM SAID BASE REGION, SAID P-N JUNCTIONS BEING SPACED APART BY AT LEAST ONE DIFFUSION LENGTH FOR CHARGE CARRIERS, AND SAID EMITTER REGION HAVING MAJOR CONDUCTIVITY TYPE DETERMINING IMPURITIES IN A PRO-
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-06 | 1971-05-08 | 1971-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-06 | 1975-05-08 | 1975-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-06 | 1979-05-08 | 1979-11-07 | $7700.00 | Window Closed / Lapsed |