US3336159A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for growing single thin film crystals
Assignee: NCR Voyix Corp
•
Filing: 1963-10-07
•
Granted: 1967-08-15
•
Expires: 1983-10-07
Abstract
No abstract record available.
Inventors
- 👤 Sidney H Liebson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:26
CPC Classifications
C; C30; C30B; C30B19/00; C30B13/00; C30B13/16; C30B13/22; C30B29/00; C30B29/60; Y; Y10; Y10S; Y10S117/00; Y10S117/905; Y10S148/00; Y10S148/003; Y10S148/071; Y10S148/107; Y10S148/122; Y10S148/135; Y10S148/15; Y10S148/152
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
137 words
A METHOD FOR GROWING SINGLE THIN FILM CRYSTALS UPON AN AMORPHOUS SUBSTRATE COMPRISING THE STEPS OF DEPOSITING A FILM OF CRYSTALLINE MATERIAL UPON AN AMORPHOUS SUBSTRATE, SELECTING A CRYSTALLITE OF THE FILM OF THE DESIRED ORIENTATION AS THE SEED FROM WHICH A SINGLE CRYSTAL WILL BE GROWN, CENTERING THE SELECTED CRYSTALLITE WITHIN A SOURCE OF HEAT HAVING AN ANNULAR PATTERN, ADJUSTING THE INTENSITY OF THE SOURCE OF HEAT TO PROVIDE AN ANNULAR MELTING OF THE FILM ABOUT THE SELECTED CRYSTALLITE, AND SIMULTANEOUSLY INCREASING THE RADIUS OF THE ANNULAR HEATING PATTERN AND THE HEATING INTENSITY THEREOF TO MAINTAIN A MOLTEN ZONE WITHIN THE AREA OF THE ANNULAR HEATING PATTERN UNTIL THE ENTIRE DEPOSITED FILM UPON THE SUBSTRATE HAS BEEN MELTED TO PRODUCE A SINGLE CRYSTAL OF THE DEPOSITED CRYSTALLINE MATERIAL LAYER OVER THE ENTIRE SURFACE OF THE SUBSTRATE.
Claim 2
Independent Claim
137 words
A METHOD FOR GROWING SINGLE THIN FILM CRYSTALS UPON AN AMORPHOUS SUBSTRATE COMPRISING THE STEPS OF DEPOSITING A FILM OF CRYSTALLINE MATERIAL UPON AN AMORPHOUS SUBSTRATE, SELECTING A CRYSTALLITE OF THE FILM OF THE DESIRED ORIENTATION AS THE SEED FROM WHICH A SINGLE CRYSTAL WILL BE GROWN, CENTERING THE SELECTED CRYSTALLITE WITHIN A SOURCE OF HEAT HAVING AN ANNULAR PATTERN, ADJUSTING THE INTENSITY OF THE SOURCE OF HEAT TO PROVIDE AN ANNULAR MELTING OF THE FILM ABOUT THE SELECTED CRYSTALLITE, AND SIMULTANEOUSLY INCREASING THE RADIUS OF THE ANNULAR HEATING PATTERN AND THE HEATING INTENSITY THEREOF TO MAINTAIN A MOLTEN ZONE WITHIN THE AREA OF THE ANNULAR HEATING PATTERN UNTIL THE ENTIRE DEPOSITED FILM UPON THE SUBSTRATE HAS BEEN MELTED TO PRODUCE A SINGLE CRYSTAL OF THE DEPOSITED CRYSTALLINE MATERIAL LAYER OVER THE ENTIRE SURFACE OF THE SUBSTRATE.
References Cited (Backward Citations)
US2816050A
Cited
US2813048A
Cited
US2968723A
Cited
US2992903A
Cited
US2926075A
Cited
US3160522A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-08-14 | 1971-02-13 | 1971-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-08-14 | 1975-02-13 | 1975-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-08-14 | 1979-02-13 | 1979-08-15 | $7700.00 | Window Closed / Lapsed |