US3295029A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect semiconductor device with polar polymer covered oxide coating
Assignee: General Electric Co
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Filing: 1963-04-03
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Granted: 1966-12-27
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Expires: 1983-04-03
Abstract
No abstract record available.
Inventors
- 👤 Fister Karoly Gyorgy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:30
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10D; H10D99/00; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31667
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
105 words
A SEMICONDUCTOR DEVICE COMPRISING A BODY OF SILICON SEMICONDUCTOR MATERIAL INCLUDING A PAIR OF REGIONS OF N-TYPE CONDUCTIVITY AND A THIN REGION OF P-TYPE CONDUCTIVITY SPACED BETWEEN SAID REGIONS OF N-TYPE CONDUCTIVITY AND FORMING THEREWITH A PAIR OF P-N JUNCTIONS, ELECTRICAL CONNECTIONS TO EACH OF SAID REGIONS, A THIN SILICON OXIDE LAYER CONVERING SAID BODY HAVING HYDROXYL RADICALS BONDED TO THE SURFACE OF SAID LAYER REMOTE FROM SAID BODY, AND A THIN LAYER OF A POSITIVE POLAR POLYMER ADHERED TO SAID OXIDE LAYER, SAID POLYMER CONSISTING OF THE REACTION PRODUCT OF A HYDROLIZABLE ORGANO-AMINO ALKOXY SILANE WITH SAID HYDROXYL RADICALS ASSOCIATED WITH SAID OXIDE LAYER.
References Cited (Backward Citations)
US3160520A
Cited
US3086892A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-12-26 | 1970-06-27 | 1970-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-12-26 | 1974-06-27 | 1974-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-12-26 | 1978-06-27 | 1978-12-27 | $7700.00 | Window Closed / Lapsed |