US3274670A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor contact
Assignee: AT&T Inc
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Filing: 1965-03-18
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Granted: 1966-09-27
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Expires: 1985-03-18
Abstract
No abstract record available.
Inventors
- 👤 Martin P Lepselter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:37
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S228/00; Y10S228/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
82 words
THE METHOD OF MAKING LOW RESISTANCE CONTACT TO A BODY OF SEMICONDUCTOR MATERIAL OF SILICON COMPRISING FORMING AN OXIDE MASK ON A PORTION OF THE SURFACE OF SAID SEMICONDUCTOR BODY, DEPOSITING ON SAID SURFACE A LAYER OF PLATINUM, HEATING SAID BODY AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO PRODUCE A SOLID PHASE REACTION BETWEEN THE PLATINUM AND SAID SEMICONDUCTOR TO FORM A COMPOUND OF PLATINUM AMD SAID SEMICONDUCTOR WHICH HAS A LOWER LIGHT REFLECTIVITY THAN PLATINUM OF SUCH DEGREE AS
Claim 2
Independent Claim
82 words
THE METHOD OF MAKING LOW RESISTANCE CONTACT TO A BODY OF SEMICONDUCTOR MATERIAL OF SILICON COMPRISING FORMING AN OXIDE MASK ON A PORTION OF THE SURFACE OF SAID SEMICONDUCTOR BODY, DEPOSITING ON SAID SURFACE A LAYER OF PLATINUM, HEATING SAID BODY AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO PRODUCE A SOLID PHASE REACTION BETWEEN THE PLATINUM AND SAID SEMICONDUCTOR TO FORM A COMPOUND OF PLATINUM AMD SAID SEMICONDUCTOR WHICH HAS A LOWER LIGHT REFLECTIVITY THAN PLATINUM OF SUCH DEGREE AS
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-26 | 1970-03-28 | 1970-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-26 | 1974-03-28 | 1974-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-26 | 1978-03-28 | 1978-09-27 | $7700.00 | Window Closed / Lapsed |