Method of fabricating semiconductor devices

Claim 1

THE METHOD OF FABRICATING SEMICONDUCTOR CIRCUIT ASSEMBLIES COMPRISING THE STEPS OF: (A) PROVIDING A DIELECTRIC SUPPORTING MEMBER WITH A PLURALITY OF DISCRETE PARALLEL CONDUCTORS AND OTHER CONDUCTORS ARRANGED IN A REPEATING DISCONTINUOUS PATTERN ADJACENT AN EDGE PORTION OF SAID DIELECTRIC SUPPORTING MEMBER THEREBY PROVIDING A STRAIN RELIEF BUILD-UP FOR CONDUCTORS WHICH ARE TO BE ATTACHED THERETO, (B) REGISTERING A PLURALITY OF SEMICONDUCTORS ON CERTAIN ONES OF SAID PARALLEL CONDUCTORS IN A DESIRED PATTERN, (C) CONDUCTIVELY BONDING SAID SEMICONDUCTORS TO THE CONDUCTORS OF SAID DIELECTRIC MEMBER WHILE SO REGISTERED, (D) ORTHOGONALLY REGISTERING A CONDUCTIVE ELEMENT OF A SELF-SUPPORTING CONDUCTIVE GRID WITH THE CONDUCTORS BEARING SAID SEMICONDUCTORS SO THAT THE ELEMENT OF SAID CONDUCTIVE GRID EXTENDS AT RIGHT ANGLES TO THE CONDUCTORS OF SAID DIELECTRIC MEMBER, AND IN ALIGNMENT WITH SAID STRAIN RELIEF FORMING CONDUCTORS AND MEETING THE LATTER CONDUCTORS AT A SLIGHT DEPTHWISE ANGLE THERETO. (E) CONDUCTIVELY BONDING SAID SEMICONDCUTORS TO THE CONDUCTORS OF SAID GRID TO SAID STRAIN RELIEF CONDUCTORS SO THAT THE FORCE DEVELOPED IN CONNECTING SAID ASSEMBLY TO A RECEPTACLE ARE DISTRIBUTED OVER SAID STRAIN RELIEF CONDUCTORS AND ARE NOT TRANSMITTED TO SAID SEMICONDUCTORS, AND (F) ENCAPSULATING SAID ASSEMBLY BUT LEAVING THE ENDS OF CERTAIN OF SAID CONDUCTORS OF SAID DIELECTRIC MEMBER EXPOSED FOR INTERCONNECTION TTO A UTILIZATION DEVICE.

Claim 2

THE METHOD OF FABRICATING SEMICONDUCTOR CIRCUIT ASSEMBLIES COMPRISING THE STEPS OF: (A) PROVIDING A DIELECTRIC SUPPORTING MEMBER WITH A PLURALITY OF DISCRETE PARALLEL CONDUCTORS AND OTHER CONDUCTORS ARRANGED IN A REPEATING DISCONTINUOUS PATTERN ADJACENT AN EDGE PORTION OF SAID DIELECTRIC SUPPORTING MEMBER THEREBY PROVIDING A STRAIN RELIEF BUILD-UP FOR CONDUCTORS WHICH ARE TO BE ATTACHED THERETO, (B) REGISTERING A PLURALITY OF SEMICONDUCTORS ON CERTAIN ONES OF SAID PARALLEL CONDUCTORS IN A DESIRED PATTERN, (C) CONDUCTIVELY BONDING SAID SEMICONDUCTORS TO THE CONDUCTORS OF SAID DIELECTRIC MEMBER WHILE SO REGISTERED, (D) ORTHOGONALLY REGISTERING A CONDUCTIVE ELEMENT OF A SELF-SUPPORTING CONDUCTIVE GRID WITH THE CONDUCTORS BEARING SAID SEMICONDUCTORS SO THAT THE ELEMENT OF SAID CONDUCTIVE GRID EXTENDS AT RIGHT ANGLES TO THE CONDUCTORS OF SAID DIELECTRIC MEMBER, AND IN ALIGNMENT WITH SAID STRAIN RELIEF FORMING CONDUCTORS AND MEETING THE LATTER CONDUCTORS AT A SLIGHT DEPTHWISE ANGLE THERETO. (E) CONDUCTIVELY BONDING SAID SEMICONDCUTORS TO THE CONDUCTORS OF SAID GRID TO SAID STRAIN RELIEF CONDUCTORS SO THAT THE FORCE DEVELOPED IN CONNECTING SAID ASSEMBLY TO A RECEPTACLE ARE DISTRIBUTED OVER SAID STRAIN RELIEF CONDUCTORS AND ARE NOT TRANSMITTED TO SAID SEMICONDUCTORS, AND (F) ENCAPSULATING SAID ASSEMBLY BUT LEAVING THE ENDS OF CERTAIN OF SAID CONDUCTORS OF SAID DIELECTRIC MEMBER EXPOSED FOR INTERCONNECTION TTO A UTILIZATION DEVICE.