Two terminal semiconductor high frequency oscillator

Claim 1

IN A HIGH FREQUENCY GENERATOR A SEMICONDUCTOR DIODE COMPRISING A SEMICONDUCTOR BODY HAVING A PAIR OF TERMINAL ZONES OF RELATIVELY HIGH CONDUCTIVITY AND OF OPPOSITE CONDUCTIVITY-TYPE AND AN INTERMEDIATE ZONE OF RELATIVELY MODERATE CONDUCTIVITY, IN WHICH THE INTERMEDIATE ZONE AND THE TERMINAL ZONE OPPOSITE IN CONDUCTIVITY-TYPE TO SAID INTERMEDIATE ZONE DEFINE THEREBETWEEN A P-N JUNCTION AND BOTH ARE INCLUDED WITHIN AN EPITAXIALLY GROWN LAYER ON THE OTHER TERMINAL ZONE, AND HE INTERMEDIATE ZONE AND SAID OTHER TERMINAL ZONE DEFINE THEREBETWEEN A JUNCTION BETWEEN TWO ZONES OF LIKE CONDUCTIVITY TYPE BUT DIFFERENT CONDUCTIVITIES, A CAVITY HOUSING THE DIODE RESONANT AT A FREQUENCY RELATED TO THE TRANSMIT TIME OF ELECTRONS ACROSS THE INTERMEDIATE ZONE OF THE DIODE, AND MEANS FOR APPLYING A VOLTAGE TO THE DIODE FOR BIASING THE P-N JUNCTION BEYOND AVALANCHE BREAKDOWN FOR THE GENERATION OF ELECTRONS IN THE INTERMEDIATE ZONE AND THE ESTABLISHING OF OSCILLATIONS IN THE CAVITY AT A RESONANT FREQUENCY.