US3266127A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming contacts on semiconductors
Assignee: International Business Machines Corp
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Filing: 1964-01-27
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Granted: 1966-08-16
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Expires: 1984-01-27
Abstract
No abstract record available.
Inventors
- 👤 William E Harding
- 👤 Jack L Langdon
- 👤 Raymond P Pecoraro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 09:36
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/033; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/929; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49147; Y10T29/49149; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12611; Y10T428/12736
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
IN THE PROCESS OF FORMING A CONTACT AND AN INTERCONNECTION ON A SEMICONDUCTOR HAVING AN OXIDE COATING THEREON, THE STEPS COMPRISING: SELECTIVELY DEPOSITING A HIGHLY CONDUCTIVE, EASILY SOLDERED, OXIDE-ADHERING METAL ON AN OXIDE-COATED SEMICONDUCTOR TO FORM AN INTERCONNECTION ON THE OXIDE SURFACE; ETCHING A CONTACT AREA THROUGH A PORTION OF SAID INTERCONNECTION AND THROUGH THE OXIDE COATING TO THE SURFACE OF THE SEMICONDUCTOR; SELECTIVELY DEPOSITING AN ALUMINUM OHMIC CONTACT IN THE ETCHED CONTACT AREA SO AS TO COVER THE SEMICONDUCTOR SURFACE AND TO OVERLAP AT LEAST ON A PORTION OF THE INTERCONNECTION ADJACENT THE ATCHED CONTACT AREA; AND HEATING THE SEMICONDUCTOR, HAVING SAID INTERCONNECTION METAL AND SAID CONTACT METAL DEPOSITED THEREON, TO A TEMPERATURE SUFFICIENT TO CAUSE THE ALLOYING OF THE ALUMINUM CONTACT WITH THE SURFACE OF THE SEMICONDUCTOR.
Claim 2
Dependent Claim
129 words
IN THE PROCESS OF FORMING A CONTACT AND AN INTERCONNECTION ON A SEMICONDUCTOR HAVING AN OXIDE COATING THEREON, THE STEPS COMPRISING: SELECTIVELY DEPOSITING A HIGHLY CONDUCTIVE, EASILY SOLDERED, OXIDE-ADHERING METAL ON AN OXIDE-COATED SEMICONDUCTOR TO FORM AN INTERCONNECTION ON THE OXIDE SURFACE; ETCHING A CONTACT AREA THROUGH A PORTION OF SAID INTERCONNECTION AND THROUGH THE OXIDE COATING TO THE SURFACE OF THE SEMICONDUCTOR; SELECTIVELY DEPOSITING AN ALUMINUM OHMIC CONTACT IN THE ETCHED CONTACT AREA SO AS TO COVER THE SEMICONDUCTOR SURFACE AND TO OVERLAP AT LEAST ON A PORTION OF THE INTERCONNECTION ADJACENT THE ATCHED CONTACT AREA; AND HEATING THE SEMICONDUCTOR, HAVING SAID INTERCONNECTION METAL AND SAID CONTACT METAL DEPOSITED THEREON, TO A TEMPERATURE SUFFICIENT TO CAUSE THE ALLOYING OF THE ALUMINUM CONTACT WITH THE SURFACE OF THE SEMICONDUCTOR.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-15 | 1970-02-14 | 1970-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-15 | 1974-02-14 | 1974-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-15 | 1978-02-14 | 1978-08-16 | $7700.00 | Window Closed / Lapsed |