Patent FR1256632A successfully refreshed from Google Patents.
US3265909A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor
Assignee: General Electric Co
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Filing: 1963-09-03
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Granted: 1966-08-09
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Expires: 1983-09-03
Abstract
No abstract record available.
Inventors
- 👤 Finis E Gentry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 08:12
CPC Classifications
H; H10; H10D; H10D88/00; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/72; H10D18/00; H10D18/60; H10D84/00; H10D84/101; H10D84/121; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/483; H10W90/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
175 words
A SEMICONDUCTOR SWITCHING DEVICE ADAPTED TO BE CONNECTED IN A MAIN CURRENT CONDUCTING PATH AND SWITCHED BETWEEN HIGH AND LOW IMPEDANCE MODES INCLUDING A COMBINATION (A) THREE TERMINALS INCLUDING (A) A PAIR OF MAIN TERMINALS ADAPTED TO BE CONNECTED IN A MAIN CURRENT CARRYING PATH (B) A GATING TERMINAL FOR SWITCHING THE SEMICONDUCTOR SWITCHING DEVICE BETWEEN ITS HIGH AND LOW IMPEDANCE STATES, (B) MONOCRYSTALLINE SEMICONDUCTOR SWITCHING MEANS INCLUDING (A) A PAIR OF SEMICONDUCTOR PELLETS (1) ONE OF SAID SEMICONDUCTOR PELLETS HAVING THREE ALTERNATE LAYERS OF OPPOSITE CONDUCTIVITY TYPE THEREBY FORMING A TRANSISTOR WITH TWO OUTER LAYERS OF ONE CONDUCTIVITY TYPE SEPARATED BY A BASE REGION OF OPPOSITE CONDUCTIVITY TYPE, AND (2) THE OTHER ONE OF SAID PAIR OF SEMICONDUCTOR PELLETS CONSISTING OF FOUR LAYERS WITH ALTERNATE LAYERS OF OPPOSITE CONDUCTIVITY TYPE FORMING A FOUR LAYER SEMICONDUCTOR SWITCH OF THE GATE TURN OFF TYPE, (3) SAID TRANSISTOR HAVING ITS TWO OUTER LAYERS ELECTRICALLY CONNECTED BETWEEN SAID PAIR OF MAIN TERMINALS SO THAT ITS THREE LAYERS ARE IN THE MAIN CURRENT CONDUCTING PATH OF THE SWITCHING DEVICE,
Claim 2
Dependent Claim
175 words
A SEMICONDUCTOR SWITCHING DEVICE ADAPTED TO BE CONNECTED IN A MAIN CURRENT CONDUCTING PATH AND SWITCHED BETWEEN HIGH AND LOW IMPEDANCE MODES INCLUDING A COMBINATION (A) THREE TERMINALS INCLUDING (A) A PAIR OF MAIN TERMINALS ADAPTED TO BE CONNECTED IN A MAIN CURRENT CARRYING PATH (B) A GATING TERMINAL FOR SWITCHING THE SEMICONDUCTOR SWITCHING DEVICE BETWEEN ITS HIGH AND LOW IMPEDANCE STATES, (B) MONOCRYSTALLINE SEMICONDUCTOR SWITCHING MEANS INCLUDING (A) A PAIR OF SEMICONDUCTOR PELLETS (1) ONE OF SAID SEMICONDUCTOR PELLETS HAVING THREE ALTERNATE LAYERS OF OPPOSITE CONDUCTIVITY TYPE THEREBY FORMING A TRANSISTOR WITH TWO OUTER LAYERS OF ONE CONDUCTIVITY TYPE SEPARATED BY A BASE REGION OF OPPOSITE CONDUCTIVITY TYPE, AND (2) THE OTHER ONE OF SAID PAIR OF SEMICONDUCTOR PELLETS CONSISTING OF FOUR LAYERS WITH ALTERNATE LAYERS OF OPPOSITE CONDUCTIVITY TYPE FORMING A FOUR LAYER SEMICONDUCTOR SWITCH OF THE GATE TURN OFF TYPE, (3) SAID TRANSISTOR HAVING ITS TWO OUTER LAYERS ELECTRICALLY CONNECTED BETWEEN SAID PAIR OF MAIN TERMINALS SO THAT ITS THREE LAYERS ARE IN THE MAIN CURRENT CONDUCTING PATH OF THE SWITCHING DEVICE,
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-08 | 1970-02-07 | 1970-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-08 | 1974-02-07 | 1974-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-08 | 1978-02-07 | 1978-08-09 | $7700.00 | Window Closed / Lapsed |