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US3257246A Expired / Lapsed US ⏱️ 0.0 years remaining

Methods for manufacturing semiconductor devices

Assignee: Thales SA
•
Filing: 1962-07-09
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Granted: 1966-06-21
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Expires: 1982-07-09
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Abstract

No abstract record available.

Inventors

  • 👤 Grosvalet Jean
  • 👤 Leclerc Pierre

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 04:59
CPC Classifications
H; H10; H10P; H10P50/00; C; C30; C30B; C30B25/00; C30B25/02; C30B25/08; H10D; H10D62/00; H10D62/10; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/05

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 103 words
A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE FROM A MONOCRYSTALLINE SEMICONDUTOR BODY COMPRISING THE STEPS OF FORMING A LOCAL CAVITY IN THE SURFACE OF SAID BODY, BY DIRECTING ON A PREDETERMINED PORTION OF SAID SURFACE, A CAPILLARY JET OF A GAS HAVING A CHEMICAL ACTION ON SAID SEMICONDUCTOR, SAID JET HAVING A SECTION WHICH IS COEXTENSIVE WITH SAID PORTION AND DEPOSITING IN SAID CAVITY A LAYER CONSISTING OF THE SAME SEMICONDUCTOR MATERIAL CONTAINING AN IMPURITY, BY DIRECTING INTO SAID CAVITY A JET OF A GASEOUS MIXTURE HAVING THE SAME SECTION AS SAID FIRST MENTIONED JET INCLUDING SAID SEMICONDUCTOR AND SAID IMPURITY AS COMPONENTS.
Claim 2
Independent Claim 103 words
A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE FROM A MONOCRYSTALLINE SEMICONDUTOR BODY COMPRISING THE STEPS OF FORMING A LOCAL CAVITY IN THE SURFACE OF SAID BODY, BY DIRECTING ON A PREDETERMINED PORTION OF SAID SURFACE, A CAPILLARY JET OF A GAS HAVING A CHEMICAL ACTION ON SAID SEMICONDUCTOR, SAID JET HAVING A SECTION WHICH IS COEXTENSIVE WITH SAID PORTION AND DEPOSITING IN SAID CAVITY A LAYER CONSISTING OF THE SAME SEMICONDUCTOR MATERIAL CONTAINING AN IMPURITY, BY DIRECTING INTO SAID CAVITY A JET OF A GASEOUS MIXTURE HAVING THE SAME SECTION AS SAID FIRST MENTIONED JET INCLUDING SAID SEMICONDUCTOR AND SAID IMPURITY AS COMPONENTS.

References Cited (Backward Citations)

DE102994C Cited
US2744000A Cited
US3000768A Cited
US3065116A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1969-06-20 1969-12-20 1970-06-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1973-06-20 1973-12-20 1974-06-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1977-06-20 1977-12-20 1978-06-21 $7700.00 Window Closed / Lapsed

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