US3243323A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gas etching
Assignee: Motorola Solutions Inc
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Filing: 1965-09-01
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Granted: 1966-03-29
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Expires: 1985-09-01
Abstract
No abstract record available.
Inventors
- 👤 Wilfred J Corrigan
- 👤 David L Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:51
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/05; Y10S148/051; Y10S148/054; Y10S148/057; Y10S148/118; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
125 words
A METHOD OF PREPARING SEMICONDUCTOR MATERIAL, INCLUDING THE STEPS OF: (A) PLACING A CRYSTAL ELEMENT OF THE SEMICONDUCTOR MATERIAL SELECTED FROMTHE GROUP CONSISTING OF SILICON AND GERMANIUM ON A PLANAR SUPPORT, (B) POISITIONING SAID SUPPORT IN A CLOSED REACTION CHAMBER, (C) HEATING SAID CRYSTAL ELEMENT AT A TEMPERATURE BELOW THE MELTING POINT THEREOF AND ABOVE A MINIMUM TEMPERATURE WHICH IS 700*C. IN THE CASE OF GERMANIUM AND 850*C. IN THE CASE OF SILICON, (D) PASSING A MIXTURE CONSISTING ESSENTIALLY OF HYDROGENGAS AND A MINOR PROPORTION OF GASEOUS HYDROGEN CHLORIDE OVER SAID HEATED CRYSTAL ELEMENT TO ETCH THE SURFACE THEREOF, (E) STOPPING THE FLOW OF GASEOUS HYDROGEN CHLORIDE, AND (F) WITHOUT REMOVING SAID CRYSTAL ELEMENT FROM SAID CHAMBER, PASSING A GASEOUS COMPOUND OVER SAID CRYSTAL ELEMENT.
Claim 2
Independent Claim
125 words
A METHOD OF PREPARING SEMICONDUCTOR MATERIAL, INCLUDING THE STEPS OF: (A) PLACING A CRYSTAL ELEMENT OF THE SEMICONDUCTOR MATERIAL SELECTED FROMTHE GROUP CONSISTING OF SILICON AND GERMANIUM ON A PLANAR SUPPORT, (B) POISITIONING SAID SUPPORT IN A CLOSED REACTION CHAMBER, (C) HEATING SAID CRYSTAL ELEMENT AT A TEMPERATURE BELOW THE MELTING POINT THEREOF AND ABOVE A MINIMUM TEMPERATURE WHICH IS 700*C. IN THE CASE OF GERMANIUM AND 850*C. IN THE CASE OF SILICON, (D) PASSING A MIXTURE CONSISTING ESSENTIALLY OF HYDROGENGAS AND A MINOR PROPORTION OF GASEOUS HYDROGEN CHLORIDE OVER SAID HEATED CRYSTAL ELEMENT TO ETCH THE SURFACE THEREOF, (E) STOPPING THE FLOW OF GASEOUS HYDROGEN CHLORIDE, AND (F) WITHOUT REMOVING SAID CRYSTAL ELEMENT FROM SAID CHAMBER, PASSING A GASEOUS COMPOUND OVER SAID CRYSTAL ELEMENT.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-03-28 | 1969-09-27 | 1970-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-03-28 | 1973-09-27 | 1974-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-03-28 | 1977-09-27 | 1978-03-29 | $7700.00 | Window Closed / Lapsed |