US3234058A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming an integral masking fixture by epitaxial growth
Assignee: International Business Machines Corp
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Filing: 1962-06-27
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Granted: 1966-02-08
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Expires: 1982-06-27
Abstract
No abstract record available.
Inventors
- 👤 John C Marinace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:43
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/70; H10D99/00; H10P; H10P10/00; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P95/00; H10P95/50; H10D62/00; H10D62/10; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S438/00; Y10S438/933; Y10S438/979
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
89 words
THE PROCESS OF FABRICATING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF: PROVIDING A SUBSTRATE OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE, EXPITAXIALLY FORMING A LAYER OF SEMICONDUCTOR MATERIAL OF SUCH HIGH RESISTIVITY AS TO ACT AS AN INSULATOR ON ONE SURFACE OF SAID SUBSTRATE, FORMING AT LEAST ONE HOLE IN THE HIGH RESISTIVITY LAYER, AND EPITAXIALLY DEPOSITING SEMICONDUCTOR MATERIAL OF OPPOSITE CONDUCTIVITY TYPE OVER SAID HIGH RESISTIVITY LAYER AND INTO SAID AT LEAST ONE HOLE TO DEFINE A JUNCTION BETWEEN SAID SUBSTRATE AND SAID MATERIAL OF OPPOSITE CONDUCTIVITY TYPE.
Claim 2
Dependent Claim
89 words
THE PROCESS OF FABRICATING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF: PROVIDING A SUBSTRATE OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE, EXPITAXIALLY FORMING A LAYER OF SEMICONDUCTOR MATERIAL OF SUCH HIGH RESISTIVITY AS TO ACT AS AN INSULATOR ON ONE SURFACE OF SAID SUBSTRATE, FORMING AT LEAST ONE HOLE IN THE HIGH RESISTIVITY LAYER, AND EPITAXIALLY DEPOSITING SEMICONDUCTOR MATERIAL OF OPPOSITE CONDUCTIVITY TYPE OVER SAID HIGH RESISTIVITY LAYER AND INTO SAID AT LEAST ONE HOLE TO DEFINE A JUNCTION BETWEEN SAID SUBSTRATE AND SAID MATERIAL OF OPPOSITE CONDUCTIVITY TYPE.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-02-07 | 1969-08-09 | 1970-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-02-07 | 1973-08-09 | 1974-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-02-07 | 1977-08-09 | 1978-02-08 | $7700.00 | Window Closed / Lapsed |