Field-effect transistor circuit

Claim 1

AN ELECTRONIC SWITCHING CIRCUIT COMPRISING, FIRST AND SECOND FIELD-EFFECT TRANSISTORS EACH COMPRISING DRAIN AND SOURCE ELECTRODES FORMED ON A SUBSTRATE OF SEMICONDUCTOR MATERIAL AND A GATE ELECTRODE INSULATED FROM SAID SUBSTRATE, SAID DRAIN AND SOURCE ELECTRODES BEING CONNECTED TO EACH OTHER BY A CHANNEL OF CONTROLLABLE CONDUCTIVITY, MEANS CONNECTING SAID CHANNELS OF CONTROLLABLE CONDUCTIVITY IN SERIES, MEANS INCLUDING A LOAD CONNECTED ACROSS THE CHANNEL OF CONTROLLABLE CONDUCTIVITY OF ONE OF SAID FIRST AND SECOND TRANSISTORS, MEANS EFFECTIVELY COUPLED ACROSS SAID FIRST AND SECOND TRANSISTORS FOR APPLYING INPUT SIGNALS, AND CIRCUIT MEANS FOR APPLYING CONTROL SIGNAL VOLTAGES TO SAID GATE ELECTRODES OF SAID FIRST AND SECOND TRANSISTORS, SAID CONTROL VOLTAGES HAVING A PREDETERMINED VALUE AND POLARITY SUCH THAT WHEN ONE OF SAID CHANNELS IS CAUSED TO BE IN A HIGH CONDUCTIVITY STATE THE OTHER IS CAUSED TO BE IN A LOW CONDUCTIVITY STATE, AND VICE VERSA.