Low frequency amplifier employing field effect device

Claim 1

A SEMICONDUCTOR NETWORK COMPRISING A BODY OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL, A FIRST REGION OF ONE CONDUCTIVITY TYPE DEFINED BY THE MAJOR BULK OF SAID BODY, A SECOND REGION OF OPPOSITE CONDUCTIVITY TYPE DEFINED BY SAID BODY ADJACENT THE SURFACE THEREOF AND CONTIGUOUS TO SAID FIRST REGION, A THIRD REGION OF SAID ONE CONDUCTIVITY TYPE DEFINED IN SAID SECOND REGION ADJACENT THE SURFACE THEREOF AND SPACED FROM SAID FIRST REGION, AN ISOLATED PORTION OF SAID SECOND REGION BEING CONNECTED TO THE REMAINDER OF SAID SECOND REGION BY A THIN CHANNEL PORTION OF SAID SECOND REGION UNDERLYING SAID THIRD REGION, A FOURTH REGION OF SAID ONE CONDUCTIVITY TYPE DEFINED IN SAID SECOND REGION OF SAID BODY ADJACENT THE SURFACE THEREOF AND SPACED FROM SAID FIRST REGION BY A THIN BASE PORTION AND FROM SAID THIRD REGION BY AN AMOUNT GREATER THAT THE THICKNESS OF SAID BASE PORTION, FIRST CONDUCTIVE MEANS CONTACTING SAID FIRST REGION AT A POSITION CLOSELY ADJACENT SAID SECOND REGION, SECOND CONDUCTIVE MEANS CONTACTING SAID FIRST REGION AT A POSITION SPACED FROM SAID SECOND REGION BY AN AMOUNT SUBSTANTIALLY GREATER THAN THE SPACING BETWEEN SAID FIRST CONDUCTIVE MEANS AND SAID SECOND REGION, THIRD CONDUCTIVE MEANS CONTACTING SAID ISOLATED PORTION OF SAID SECOND REGION, FOURTH CONDUCTIVE MEANS CONTACTING SAID THIRD REGION, AND FIFTH CONDUCTIVE