Shear gauge pressure-measuring device

Claim 1

AN IMPROVED SEMICONDUCTOR PRESSURE DIAPHRAGM COMPRISING: A MONOCRYLSTALLINE WAFER OF SEMICONDUCTING MATERIAL PRIMARILY OF ONE CONDUCTIVITY TYPE HAVING DISPOSED THEREIN A REGION OF THE OPPOSITE CONDUCTIVITY TYPE EXTENDING TO THE SURFACE OF SAID WAFER, SAID WAFER BEING ORIENTED IN A CRYSTAL PLANE HAVING A LARGE SHEAR COEFFICIENT; A PAIR OF ALIGNED INPUT CONTACTS ENGAGING SAID REGION, THE LINE BETWEEN SAID CONTACTS EXTENDING ALONG A CRYSTAL DIRECTION HAVING A LARGE SHEAR COEFFICIENT AND PASSING THROUGH SAID REGION IN A DIRECTION WITH RESPECT TO THE WAFER RADIUS PASSING THROUGH SAID REGION SELECTED TO PROVIDE MAXIMUM SHEAR STRESS WHEN PRESSURE IS APPLIED ACROSS THE SURFACE OF SAID DIAPHRAGM; AND A PAIR OF OUTPUT CONDUCTORS ENGAGING SAID REGION AND SPACED APART ON THE SURFACE THEREOF ALONG A LINE NORMAL TO SAID LINE BETWEEN SAID INPUT CONTACTS FOR DEVELOPING A VOLTAGE BETWEEN SAID OUTPUT CONDUCTORS PROPORTIONAL TO THE SHEAR STRESS APPLIED TO SAID WAFER AS A RESULT OF SAID APPLIED PRESSURE.