Complementary transistor structure

Claim 1

A SEMICONDUCTOR STRUCTURE COMPRISING: A UNITARY BODY OF SEMICONDUCTIVE MATERIAL INCLUDING A SUBSTRATE; FIRST AND SECOND SEPARATE SEMICONDUCTIVE REGIONS OF A FIRST TYPE OF SEMICONDUCTIVITY ON SAID SUBSTRATE; THIRD AND FOURTH SEMICONDUCTIVE REGIONS OF A SECOND TYPE OF SEMICONDUCTIVITY DISPOSED IN P-N JUNCTION FORMING RELATIONSHIP WITH SAID FIRST REGION ON THE SURFACE THEREOF REMOTE FROM SAID SUBSTRATE AND FORMING A FIRST SUB-STRUCTURE OPERABLE AS A FIRST TRANSISTOR WHEREIN SAID FIRST REGION SERVES AS THE BASE REGION AND SAID THIRD AND FOURTH REGIONS SERVE AS EMITTER AND COLLECTOR REGIONS; A FIFTH SEMICONDUCTIVE REGION OF SAID SECOND TYPE OF SEMICONDUCTIVITY DISPOSED IN P-N JUNCTION FORMING RELATIONSHIP WITH SAID SECOND REGION; AND A SIXTH SEMICONDUCTIVE REGION OF SAID FIRST TYPE OF SEMICONDUCTIVITY DISPOSED IN P-N JUNCTION FORMING RELATIONSHIP WITH SAID FIFTH REGION AND FORMING A SECOND SUB-STRUCTURE OPERABLEL AS A SECOND TRANSISTOR OF OPPOSITE POLARITY TO THAT OF SAID FIRST TRANSISTOR WHEREIN SAID SECOND REGION SERVES AS THE COLLECTOR REGION, SAID FIFTH REGION SERVES AS THE BASE REGION AND SAID SIXTH REGION SERVES AS THE EMITTER REGION.