High output electrical strain transducers

Claim 1

A SEMICONDUCTOR STRAIN GAUGE COMPRISING: (A) AN ELONGATE SINGLE SEMICONDUCTOR CRYSTAL OF PREDETERMINED CRYSTALLOGRAPHIC ORIENTATION AND OF A FIRST PREDETERMINED CONDUCTIVITY TYPE, SAID SEMICONDUCTOR CRYSTAL DEFINING FIRST AND SECOND OPPOSED LONGITUDINAL SURFACES, SAID FIRST AND SECOND LONGITUDINAL SURFACES AND THE END SURFACES OF SAID CRYSTAL CONTAINING THEREIN ACTIVE IMPURITY ATOMS OF A SEOCN PREDETERMINED CONDUCTIVITY TYPE TO THEREBY DEFINE A SHALLOW PERIPHERAL SURFACE BAND OF SAID SECOND PREDETERMINED CONDUCTIVITY TYPE LONGITUDINALLY ENCIRCLING SAID CRYSTAL EXCLUSIVE OF ITS LONGITUDINAL EDGE SURFACE, SAID PERIPHERAL SURFACE BAND OF SAID SECOND PREDETERMINED CONDUCTIVITY TYPE BEING ELECTRICALLY ISOLATED FROM THE REMAINING FIRST CONDUCTIVITY TYPE PORTION OF SAID CRYSTAL BY THE HIGH IMPEDANCE BARRIER PROVIDED BY THE JUNCTION THEREBETWEEN, SAID CRYSTAL HAVING A PLURALITY OF PREDETERMINED GROOVES IN THE LONGITUDINAL AND END SURFACES THEREOF EXTENDING INWARDLY THROUGH SAID SURFACE AND PENETRATING THE UNDERLYING JUNCTION, SAID GROOVES DIVIDING SAID BAND INTO DISCRETE ELECTRICALLY ISOLATED SURFACE REGIONS OF SAID SECOND PREDETERMINED CONDUCTIVITY TYPE; AND (B) A PLURALITY OF ELECTRICAL CONTACTS OHMICALLY BONDED TO PREDETERMINED POINTS ON A LONGITUDINAL SURFACE OF SAID BODY FOR CONNECTION OF ELECTRICAL MEASURING CIRCUITRY THERETO FOR MEASUREMENT OF CHANGES IN THE ELECTRICAL RESISTANCE OF SAID DISCRETE SURFACE REGIONS BETWEEN SAID CONTACTS UPON STRESSING OF SAID CRYSTAL.