US3160539A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface treatment of silicon
Assignee: TRW Semiconductors Inc
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Filing: 1961-07-18
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Granted: 1964-12-08
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Expires: 1981-07-18
Abstract
No abstract record available.
Inventors
- 👤 Thomas C Hall
- 👤 Alan L Harrington
- 👤 John M Crishal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:40
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P70/00; H10P70/10; H10P70/15; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/145
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
139 words
A METHOD OF ETCHING ELEMENTAL SILICON INCLUDING THE STEPS OF: DISSOLVING AN AROMATIC COMPOUND HAVING AT LEAST TWO HYDROXYL GROUPS ATTACHED TO THE ADJACENT CARBON ATOMS IN A SOLVENT SELECTED FROM THE GROUP CONSISTING ESSENTIALLY OF ANHYDROUS HYDRAZINE, ETHYLAMINE, AMMONIUM HYDROXIDE, PIPERIDINE, AND AN ORGANIC ALIPHATIC COMPOUND WITH TWO OR MORE PRIMARY AMINO GROUPS WHERE THE NUMBER OF CARBON ATOMS BETWEEN THE CARBON DIRECTLY ATTACHED TO THE AMINO GROUPS IS NOT GREATER THAN 1, TO WHICH HAS BEEN ADDED WATER IN THE RANGE FROM 5-50% BY VOLUME OF THE COMBINED SOLUTION; AND MAINTAINING SAID SOLUTION AT A TEMPERATURE IN THE RANGE FROM 90*C. TO 110*C.; AND APPLYING THE RESULTING SOLUTION TO ELEMENTAL SILICON, SAID ETCH BEING AN OXIDIZER OF ELEMENTAL SILICON AND BEING A SOLVENT FOR THE NON-GASEOUS OXIDATION PRODUCT OF THE REACTION BY THE SILICON AND THE ETCH.
Claim 2
Independent Claim
139 words
A METHOD OF ETCHING ELEMENTAL SILICON INCLUDING THE STEPS OF: DISSOLVING AN AROMATIC COMPOUND HAVING AT LEAST TWO HYDROXYL GROUPS ATTACHED TO THE ADJACENT CARBON ATOMS IN A SOLVENT SELECTED FROM THE GROUP CONSISTING ESSENTIALLY OF ANHYDROUS HYDRAZINE, ETHYLAMINE, AMMONIUM HYDROXIDE, PIPERIDINE, AND AN ORGANIC ALIPHATIC COMPOUND WITH TWO OR MORE PRIMARY AMINO GROUPS WHERE THE NUMBER OF CARBON ATOMS BETWEEN THE CARBON DIRECTLY ATTACHED TO THE AMINO GROUPS IS NOT GREATER THAN 1, TO WHICH HAS BEEN ADDED WATER IN THE RANGE FROM 5-50% BY VOLUME OF THE COMBINED SOLUTION; AND MAINTAINING SAID SOLUTION AT A TEMPERATURE IN THE RANGE FROM 90*C. TO 110*C.; AND APPLYING THE RESULTING SOLUTION TO ELEMENTAL SILICON, SAID ETCH BEING AN OXIDIZER OF ELEMENTAL SILICON AND BEING A SOLVENT FOR THE NON-GASEOUS OXIDATION PRODUCT OF THE REACTION BY THE SILICON AND THE ETCH.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-12-08 | 1968-06-08 | 1968-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-12-08 | 1972-06-08 | 1972-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-12-08 | 1976-06-08 | 1976-12-08 | $7700.00 | Window Closed / Lapsed |