Semiconductor circuit complex having isolation means

Claim 1

A UNITARY SOLID-STATE ELECTRONIC CIRCUIT COMPRISING A SEMICONDUCTING WAFER HAVING A PLURALITY OF ZONES OF EXTRINSIC SEMICONDUCTING MATERIAL THEREIN, OF ONE CONDUCTIVITY TYPE HAVING DISPOSED THEREIN EXTRINSIC SEMICONDUCTING MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE, FORMING P-N JUNCTIONS WITH THE MATERIAL OF SAID ZONES, SAID ZONES BEING SEPARATED BY INTRINSIC SEMICONDUCTING MATERIAL AND ISOLATED FROM EACH OTHER BY AT LEAST ONE BARRIER OF EXTRINSIC SEMICONDUCTING MATERIAL OF AN OPPOSTIE CONDUCTIVITY TYPE FROM THE MATERIAL OF SAID ZONES, SAID BARRIER HAVING A WIDTH AT LEAST IN EXCESS OF THE DIFFUSION LENGTH OF MINORITY CARRIERS THEREIN, AN ELECTRICALLY INSULATING MASK DISPOSED UPON THE SURFACE OF SAID WAFER, AND ELECTRICAL CONDUCTORS DISPOSED ON SAID MASK AND INSULATED FROM SAID WAFER THEREBY AND FURTHER EXTENDING THROUGH SAID MASK AT SELECTED POINTS THEREOF INTO ELECTRICAL CONTACT WITH PARTICULAR PORTIONS OF THE DEVICES FORMED BY THE EXTRINSIC SEMICONDUCTING MATERIAL OF OPPOSITE CONDUCTIVITY TYPES FORMING A P-N JUNCTION WITHIN SAID ZONES TO THEREBY DEFINE AN ELECTRONIC CIRCUIT.